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Showing 1 to 1 of 1 for “"selective lateral epitaxy (SLE)"”.
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Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy
Realizing lateral p-n junction is a critical technique to fabricate electronic and optic devices. Recently, lateral p-n junctions were achieved by ex-situ doping on thin film or in-situ doping of vertical nanowire (NW). However, fabricating lateral junctions on thin film are less effective due to …