Global ETD Search

Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

Results

Showing 1 to 3 of 3 for “"selective lateral epitaxy"”.

  1. Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy

    Realizing lateral p-n junction is a critical technique to fabricate electronic and optic devices. Recently, lateral p-n junctions were achieved by ex-situ doping on thin film or in-situ doping of vertical nanowire (NW). However, fabricating lateral junctions on thin film are less effective due to …

    uiuc Repository record for Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy (opens in a new tab)

  2. Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy

    Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2021-12-01

    uiuc Repository record for Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy (opens in a new tab)

  3. Selective lateral nano-epitaxy for manufacturable nanowire electronics

    … This particular type of VLS growth is called Selective Lateral nano-Epitaxy (SLE), where the selectivity is provided by seed nanoparticles. Those planar nanowires are compatible with the well-established planar processing technology and are therefore a potential solution to realizing …

    uiuc Repository record for Selective lateral nano-epitaxy for manufacturable nanowire electronics (opens in a new tab)