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Showing 1 to 3 of 3 for “"selective lateral epitaxy"”.
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Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy
Realizing lateral p-n junction is a critical technique to fabricate electronic and optic devices. Recently, lateral p-n junctions were achieved by ex-situ doping on thin film or in-situ doping of vertical nanowire (NW). However, fabricating lateral junctions on thin film are less effective due to …
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Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2021-12-01
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Selective lateral nano-epitaxy for manufacturable nanowire electronics
… This particular type of VLS growth is called Selective Lateral nano-Epitaxy (SLE), where the selectivity is provided by seed nanoparticles. Those planar nanowires are compatible with the well-established planar processing technology and are therefore a potential solution to realizing …