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Showing 1 to 17 of 17 for “"selective etching"”.
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Reactive Plasma Etching of Silicon Carbide, Silicon Carbonitride, and Titanium Nitride in a Tetrafluoroethane/Oxygen Plasma
In this study we investigate the etching of the diffusion barrier between the silicon substrate and the 1ow-k dielectric material. We will use silicon carbide (SiC), silicon carbonitride (SiCN), and titanium nitride (TiN) as our diffusion layer. Using the RF plasma and the magnetron gun with …
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Modulation-Doped Field-Effect Transistors for High-Power Microwave Applications
… beam resist technique and sequential wet and dry selective etching. A high linearity of device characteristics is important to minimize intermodulation of high frequency signals under high-power operation. The linearity of device performance is investigated through the comparison of InGaAs/GaAs …
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Materials selection and processing for reliable neural interfaces
… can be further processed after the TDP, using selective etching to reduce the diameter of the probe. These devices have been implanted and have been used to record neural activity in vivo while evoking minimal tissue response. Additionally, electrodeposition of biocompatible metals onto the …
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Topological Insulators Interfaced with Trivial and Ferromagnetic Insulators. Selective contact and patterning of surface states.
… of topological surface states. First, different etching techniques are compared on TI films and the devices are characterised by transport measurements. Next, two types of heterostructures are investigated which allow for control and patterning of the TSS. First, the TI is interfaced with trivial …
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MULTIFUNCTIONAL BEHAVIORS OF TWO-DIMENSIONAL MATERIALS AND THEIR COMPOSITES
… relatively new and typically synthesized by the selective etching of the “A” layers from the layered carbides and /or nitrides known as MAX phases, which introduce MXenes with rich terminal groups (e.g. -O-, -OH, -F).</p> <p>During my Ph.D. study, firstly, the adhesive and frictional behaviors, …
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Characterization of epitaxial semiconductor films by scanning tunneling microscopy at ambient pressure
… be topographic in origin, resulting either from selective etching during surface preparation or strain-relaxation at the cleaved surface. Layers of alternating dopant-type are also resolved. In particular, alternately doped layers on GaAs are imaged by STM for the first time in air, and the pn …
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Electrodeposition of FeCoNiCu quaternary system
… system was explored for other applications. Selective etching of electrodeposited multilayer structures was investigated for different etching solutions. A diluted K<sub>2</sub>Cr<sub>2</sub>O<sub>7</sub>/H<sub>2</sub>SO<sub>4</sub> solution was successfully developed to produce grating …
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Nanoporous glass-ceramics transparent in infrared range to be used as optical sensor-Mechanical and viscoelastic properties of the TAS (Te-As-Se) glass
… of CsCl nuclei in the glass matrix followed by selective etching of the nuclei with an acid solution. The porous surface is several hundred nanometers thick and results in a surface area increase of almost four orders of magnitudes. The pores size is approximately 150 nm and can be tailored by …
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Development of intersubband terahertz lasers using multiple quantum well structures
… fabricated by combining wafer bonding and selective etching techniques. Schemes for THz emission couplings were investigated by quantifying coupling loss, including surface coupling by gratings and edging coupling by facets. The first free-space THz spectral measurement system was developed …
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Atomistic effects in reactive direct current sputter deposition
… This pronounced texture was caused by selective etching of the growing film. The deposition rate was lower than expected from Keller-Simmons. At the same time, the resputtered atoms lead to an increased deposition rate of the indirectly deposited films. A completely different approach …
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Nanostructure formation in thin polymer films
… To analyze the surface reconstruction we used selective staining along with scanning electron microscopy, selective etching in oxygen plasma in combination with scanning probe microscopy, as well as quantitative TappingMode atomic force microscopy. Surface reconstructions of block copolymers …
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Solid-state superionic stamping: Patterning 3D metallic micro- and nanostructures for surface enhanced Raman sensing
… as Solid-State Superionic Stamping (S4), for the selective etching of silver and copper. S4 is a single-step, highly scalable, all solid-state process that can be performed under ambient conditions, offering high throughput and repeatability. In the pursuit of biosensing applications of metallic …
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Dry etching processes for ferroelectric capacitors
Dry etching processes for patterning of ferroelectric thin films using environmental benign etching gases was developed. The PbZr<sub>x</sub>Ti<sub>1-x</sub>O3 (PZT) and RuO<sub>2</sub> films were patterned using CHCIFCF<sub>3</sub> and O<sub>2</sub>. Selective etching between PZT and …
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Mesostructuring of SiCN Materials and Catalysts via Microphase Separation Technique utilizing High-Density Polyethylene Blocks
… copolymer by microphase separation technique and selective etching of polylactide block.1H NMR was used to confirm the formation of copolymer. Atomic Force Microscopy (AFM) was used to analyse the microphase separated PEOPL copolymer. The progress of etching polylactide block was monitored by …
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Strain-induced self-rolled-up semiconductor micro/nanotubes: Fabrication and characterization
… layers are released from the substrate by selective etching of the sacrificial layer. They are produced by a combination of “top-down” and “bottom-up” approaches, using the epitaxial growth of strained films and conventional fabrication processes such as lithography and wet/dry etching. …
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All Inorganic Colloidal Perovskite Nanocrystals for Optoelectronic Applications
… antisolvents result in an increase in the selective etching of surface iodides, resulting in a decrease in PLQYs and blue-shift in the optical bandgap. Through detailed 1H nuclear magnetic resonance (NMR), X-ray photoemission spectroscopy (XPS), Fourier transform infrared spectroscopy …
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Growth of undoped and doped IIInitride nanowires and their characterization
… Si(100) and SiO2 substrates apart from Si(111). Selective etching of SiO2/Si helps to retain NWs on the patterned areas. The scenario is different for InN NWs as the growth takes place comparatively at low temperature. An increase of the growth temperature will enhance the dissociation of InN due …