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Showing 1 to 1 of 1 for “"selective area growth by plasma-assisted molecular beam epitaxy (PAMBE-SAG)"”.
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Development of high-performance GaN-based power transistors
… of GaN-based high-power transistors. First, selective area growth by plasma-assisted molecular beam epitaxy, a technology developed by our group for Ohmic contact improvement, is utilized to fabricate large-periphery AlGaN / GaN high electron mobility transistors (HEMTs) for high current …