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Showing 1 to 11 of 11 for “"selective area epitaxy"”.
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Nanoscale Selective Area Epitaxy for Optoelectronic Devices
… the limitations of self-assembly by combining selective area epitaxy via metal-organic chemical vapor deposition (MOCVD) with high-resolution electron beam lithography to achieve lateral control over semiconductor structures at the nanometer scale. Two different structures are presented. The …
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III-V compound semiconductor selective area epitaxy on silicon substrates
… to achieve optical data transmission on chip. Selective area epitaxy is an MOCVD/MBE growth method that deposits high quality epitaxial materials on selected substrate surface areas. The selectivity is achieved by using SiO2 or Si3N4 as a growth mask, so that epitaxial growth only happens on …
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Selective area epitaxy of III-V nanowires: toward nanowire-on-silicon tandem solar cells
Nanowires grown via the selective area epitaxy technique (SAE-NWs) are of great research interest for use in next-generation electronic and electro-optic devices. As compared to other nanowire growth techniques commonly studied, SAE-NW is a highly controllable process due to the use of a …
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Design and Characterization of Integrated Photonic Devices Fabricated Using Selective-Area Epitaxy and Distributed Bragg Reflector Surface Gratings
The second challenge involved with the fabricating of integrated photonic devices is the formation of integrable high-Q cavities. The optical feedback in most laser diodes is provided by cleaved facets. Unfortunately, cleaved facets are not an option when designing integrated photonic devices. …
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Epitaxy of Self -Assembled Nanostructures by Metalorganic Chemical Vapor Deposition
… of self-assembled nanostructures lies in the selective placement of individual nanostructures for applications such as integrated optoelectronics, quantum computing and quantum encryption. By utilizing InGaAs thin films, a method of selective area epitaxy has been developed. Not only is the …
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Engineering superconductivity in ballistic semiconductor nanowires
… quantum wires through the development of selective-area epitaxy of Al to InSb nanowires. Epitaxial InSb–Al devices generically possess a BCS-like superconducting gap in tunneling measurements and demonstrate ballistic 1D superconductivity and near-perfect transmission of supercurrents in …
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Reaction and transport processes in OMCVD : selective and group III-nitride growth
… diode fabrication in the III-Nitride system, selective area growth is used to deposit buffer layers with fewer dislocations. In addition to its recent use in the nitride system, selective area epitaxy has been pursued in OMCVD of III-V compound semiconductors in general. Quantitative …
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Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2021-12-01
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Quantum well devices fabricated using selective area growth and their application in optical fiber communication
In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing integrated quantum-well lasers and modulators. SAG can be successfully achieved with two major growth techniques: metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We …