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Showing 1 to 1 of 1 for “"selected area growth"”.
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Shadow mask assisted heteroepitaxy of compound semiconductor nanostructures
… Beam Epitaxy (SMMBE) is a technique enabling selected area epitaxy of semiconductor heterostructures through shadow masks. The objective of this work was the development of the SMMBE technique for the reliable fabrication of compound semiconductor nanostructures of high structural and optical …