Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 15 of 15 for “"saturation velocity"”.
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Mobility and Saturation Velocity in Graphene on Silicon Dioxide
… from 300 to 500 K. In addition, electron drift velocity is obtained at high electric fields up to 2 V/μm, at both 80 K and 300 K. Mobility displays a peak vs. carrier density and decreases with rising temperature above 300 K. The drift velocity approaches saturation at fields >1 V/μm, shows an …
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semiconducting carbon nanotube transistors: electron and spin transport properties
… Four simple models for the field-dependent velocity (ballistic, current saturation, velocity saturation, and constant mobility) are studied in the unipolar regime; the high-bias behavior is best explained by a velocity saturation model with a saturation velocity of 2 x 10^7 cm/s. A simple …
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Modulation-Doped Field-Effect Transistors for High-Power Microwave Applications
… including high breakdown voltage, high electron saturation velocity, high electron velocity at high electric field, and high thermal conductivity. Forming low-resistance ohmic contacts to modulation-doped InP channel heterostructures is a challenging issue and is investigated through the study of …
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N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP
… characteristics, high electron mobility, and saturation velocity, gallium nitride (GaN) material has emerged as a key contender in the high-performance semiconductor market, paving the way for the future optoelectronics and high-frequency electronics. The oxide/semiconductor interface quality …
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Characterization of Graphene Field-Effect Transistors for High Performance Electronics
… of graphene FETs are investigated. Current saturation as well as the effect of ambipolar conduction on the current-voltage characteristics are studied. A field-effect model is developed that can capture the effects of the unique band structure, such as a density-dependent saturation …
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GaN Complementary-Metal-Oxide-Semiconductor (CMOS) Technology
… polarization, high electron mobility, and high saturation velocity for electrons. These properties enable n-channel GaN-based transistors to operate at a higher switching speed, and at a higher power density than their Si counterparts. To realize the full potential of GaN, the need for a …
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Solid-state microwave amplification into millimetric frequencies
… source resistance (R.) and the intrinsic saturation velocity (V.i). The extracted intrinsic parameters are used for both large signal and minimum noise analysis.
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Optimal MOSFET design for low temperature operation
… current drive via increased carrier mobility and saturation velocity. Equally as important, the parasitic resistances of the device and of the interconnect decrease as temperature decreases. The approach of this thesis is to use comparisons of optimal designs across channel lengths and across …
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Modeling of the output and transfer characteristics of graphene field-effect transistors
… for the conductance, transconductance, and saturation voltage are derived. The results are in good agreement with the experimental data of Meric et al. [Nature Nanotechnology, vol. 3, p. 684, 2008] without assuming carrier density-dependent velocity saturation.
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GaN heterojunction FET device Fabrication, Characterization and Modeling
… band gap, large breakdown voltage, and high saturation velocity, which make it very promising for the high power and microwave applications. Although enormous progress has been made on GaN transistors in the past decades, the technologies for nitride transistors are still not mature, …
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Modeling of devices for gallium-nitride-based integrated photonics
… While the wide band gap and high electron saturation velocity make it especially suitable for high-power and high-frequency microelectronics, the ultra-wide spectral coverage by the direct band gaps of aluminum gallium nitride (AlGaN) and indium gallium nitride (InGaN) gives nitride …
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Wide Bandwidth Control Electronics For Gan-Based Pebbs
… materials, such as high electron mobility, high saturation velocity, high sheet-carrier concentration at hetero-junction interfaces, high breakdown voltages, etc. These properties make the use of III-Nitride technology a promising approach for high-power, high-temperature and high-speed …
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Performance variations due to layout-dependent stress in VLSI circuits
… to evaluate changes in transistor mobility, saturation velocity, and threshold voltage. The electrical variations are translated into gate-level delay and leakage power calculations, which are then elevated to circuit-level analysis to thoroughly evaluate the variations in circuit performance …
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Electrical and thermal transport in 2D materials: role of environment and imperfections
… heating can lead to negative differential drift velocity (with respect to the electric field), which can be controlled by changing the underlying dielectric thermal properties or thickness. Graphene on BN exhibits the largest high-field drift velocity, while graphene on HfO2 has the lowest one …
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High-field transport in two-dimensional graphene and molybdenum disulfide
… models for heating and high-field drift velocity in graphene, including the roles of both temperature and carrier density. We find that transport in supported-graphene devices does not resemble that of ideal graphene, indicating that interactions with the underlying SiO2 play a role in …