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Showing 1 to 20 of 70 for “"roughening"”.

  1. Etching, Roughening, and Patterning of Silicon(100) With Halogens

    … were studied. Chlorine (Bromine) caused surface roughening that created pits and regrowth islands with minimal desorption of SiCl 2 (SiBr2). The roughening and equilibrium morphologies at 700--750 K for surfaces with various coverages of Cl were studied. The morphologies of regrowth islands and …

    uiuc Repository record for Etching, Roughening, and Patterning of Silicon(100) With Halogens (opens in a new tab)

  2. Effect of thermomechanical processing on the surface roughening of AA6061

    Surface roughening is an undesirable feature in materials. This work investigates the cause of surface roughening in four plates of AA6061 with different thicknesses (Le. 6 mm, 9 mm and two 12 mm). Production of these plates requires thermomechanical processing of the cast slab via a two stage …

    cape-town Repository record for Effect of thermomechanical processing on the surface roughening of AA6061 (opens in a new tab)

  3. Halogen-induced modification of silicon surfaces: etching roughening, and step transformations

    … modifications of Si surfaces, including etching, roughening and step transformations. These investigations have focused on elucidating the atomic-level details associated with the evolution of terrace and step sites on Cl-Si(100)-(2x1) under conditions of halogen supersaturation. I present a novel …

    uiuc Repository record for Halogen-induced modification of silicon surfaces: etching roughening, and step transformations (opens in a new tab)

  4. Ion Irradiation Induced Roughening and Smoothing of Metal Films on Dielectric Substrates

    This study investigates the morphology evolution of ultrathin Pt films on dielectric substrates produced by heavy ion bombardment. The films roughen and form nanopatterns which coarsen in a certain dose range. The microstructure evolution is characterized using AFM, SEM and RBS. The results are …

    uiuc Repository record for Ion Irradiation Induced Roughening and Smoothing of Metal Films on Dielectric Substrates (opens in a new tab)

  5. Kinetic Roughening During Hot-Wire Chemical Vapor Deposition of Hydrogenated Amorphous Silicon

    … with time that is consistent with anomalous roughening behavior also observed in models that include shadowing. A temperature-dependent transition in roughening behavior is observed, and an activation energy is extracted that agrees with previous estimates for SiH3 surface diffusion. …

    uiuc Repository record for Kinetic Roughening During Hot-Wire Chemical Vapor Deposition of Hydrogenated Amorphous Silicon (opens in a new tab)

  6. A microtexture based analysis of surface roughening in ductile metals during tensile deformation

    … tension, and their effect on the overall surface roughening of the sheet material. A detailed account of the microstructure and texture of the individual sample sheet materials is presented and proposals for the mechanisms of surface roughening are based on plasticity analysis of the actual …

    cape-town Repository record for A microtexture based analysis of surface roughening in ductile metals during tensile deformation (opens in a new tab)

  7. A microtexture based analysis of surface roughening in ductile metals during tensile deformation

    … tension, and their effect on the overall surface roughening of the sheet material. A detailed account of the microstructure and texture of the individual sample sheet materials is presented and proposals for the mechanisms of surface roughening are based on plasticity analysis of the actual …

    cape-town Repository record for A microtexture based analysis of surface roughening in ductile metals during tensile deformation (opens in a new tab)

  8. 3-dimensional modeling and simulation of surface and sidewall roughening during plasma etching

    … Monte Carlo simulator was developed to model the roughening of a surface as well as follow the macroscopic evolution of its profile during plasma etching. The simulator employs a cellular representation of the surface with Monte Carlo modeling of the mass transport and reaction kinetics. The local …

    mit Repository record for 3-dimensional modeling and simulation of surface and sidewall roughening during plasma etching (opens in a new tab)

  9. Etching kinetics and surface roughening of polysilicon and dielectric materials in inductively coupled plasma beams

    … of the origin and control of sidewall roughening is extremely desirable, particularly at the gate level where variations in line width can adversely impact the electrical performance of the device. In addition, at the back end, feature sidewall roughness of the dielectric materials …

    mit Repository record for Etching kinetics and surface roughening of polysilicon and dielectric materials in inductively coupled plasma beams (opens in a new tab)

  10. Optimized Surface Roughening by Pulsed Waterjet for Suitable Adhesion Strength of Plasma Transferred Wire Arc Coating

    This study paired the high-pressure pulsed waterjet process and plasma transferred wire arc technology to develop a technique to remanufacture worn-out cylinder bores and give new life to worn-out engines. Plasma transferred wire arc technology is currently being used for engine remanufacturing to …

    carleton Repository record for Optimized Surface Roughening by Pulsed Waterjet for Suitable Adhesion Strength of Plasma Transferred Wire Arc Coating (opens in a new tab)

  11. Mechanisms and Reaction Paths for Surface Roughening and Epitaxial Breakdown During Molecular Beam Epitaxy: Fundamental Limits

    … (C Sn = 1 x 1018 cm-3 to 6.1 at%) on surface roughening pathways leading to EB during LT-MBE (155°C) of compressively strained films. Sn mediates surface morphological evolution through two competing pathways. With x ≲ 0.02, the dominant effect is a Sn-induced smoothening of the …

    uiuc Repository record for Mechanisms and Reaction Paths for Surface Roughening and Epitaxial Breakdown During Molecular Beam Epitaxy: Fundamental Limits (opens in a new tab)

  12. Reaction Paths for Self-Organized Surface Roughening of Silicon-Germanium Alloys During Hydride Gas-Source Molecular Beam Epitaxy

    … grown at Ts = 450°C, where strain-induced roughening is completely quenched, to thicknesses greater than the critical value for misfit dislocation formation (tc ≃ 100 nm) to probe the effect of thetaH on cross-hatch formation. At t slightly larger than tc, surface roughness is …

    uiuc Repository record for Reaction Paths for Self-Organized Surface Roughening of Silicon-Germanium Alloys During Hydride Gas-Source Molecular Beam Epitaxy (opens in a new tab)

  13. Creation of Surface and Bulk Defects of Germanium and Surface Roughening of Germanium During High Energy Ion Irradiation

    … and Villain agrees relatively well with the roughening and coarsening of the Ge(111) surfaces etched by 5 keV Xe ions at 250°C and 275°C. At 300°C, a surface pattern is observed only when the incident ion direction is parallel to the step direction; this surface pattern is the …

    uiuc Repository record for Creation of Surface and Bulk Defects of Germanium and Surface Roughening of Germanium During High Energy Ion Irradiation (opens in a new tab)

  14. Creation of Surface and Bulk Defects of Ge and Surface Roughening of Ge During High Energy Ion Irradiation

    Submitted by Jenny Wong-Welch (wongwel2@illinois.edu) on 2011-11-10T17:26:40Z No. of bitstreams: 1 2001_kim.pdf: 5955624 bytes, checksum: 04d9d46f170c764db23bc697b9df9525 (MD5)

    uiuc Repository record for Creation of Surface and Bulk Defects of Ge and Surface Roughening of Ge During High Energy Ion Irradiation (opens in a new tab)

  15. Ion Implantation Damage in Solids

    Ion induced surface smoothing and roughening processes were studied using Molecular Dynamics (MD) computer simulation. The simulations on self-ion bombarded W showed the effect of the surface on defect production and the roughening of the surface. The simulations on the CuTi, Ag and Ni with …

    uiuc Repository record for Ion Implantation Damage in Solids (opens in a new tab)

  16. Stress Induced Deformations of Thin Silicon Dioxide Films

    … are independent of surface morphology, the roughening of the films is treated as a stress-driven roughening mechanism, where the compressive stress in the films causes buckling of the films during growth.

    uiuc Repository record for Stress Induced Deformations of Thin Silicon Dioxide Films (opens in a new tab)

  17. Origin, evolution, and control of sidewall line edge roughness transfer during plasma etching

    … was shown to effectively control excessive roughening on solid films, while porous dielectrics remain challenging. Finally, an inductively-coupled plasma beam source was used to conduct a preliminary investigation into roughening of polysilicon in an HBr plasma beam. The initial polysilicon …

    mit Repository record for Origin, evolution, and control of sidewall line edge roughness transfer during plasma etching (opens in a new tab)

  18. Refinement of the Inverted T-Beam Bridge System for Virginia

    … cyclic loading at service loads, however surface roughening between precast and cast-in-place concrete must be adequate. The welded connection behaves well, granted the surfaces to be welded are properly prepared. From these results it is recommended to evaluate different surface roughening

    vt Repository record for Refinement of the Inverted T-Beam Bridge System for Virginia (opens in a new tab)

  19. Optically-Assisted Scanning Tunneling Microscopy

    … and trends demonstrate a transition from kinetic roughening to thermal roughening that is highly dependent on the deposition temperature profile.

    uiuc Repository record for Optically-Assisted Scanning Tunneling Microscopy (opens in a new tab)

  20. In-situ study of the influence of additives on the growth behavior of copper electrodeposits on copper single crystal

    … density. The deposit growth was dominated by a roughening mechanism that can be described by the random roughening term of a stochastic model.</p><p>In the presence of MPSA, growth was not confined to nucleation centers, and the (100) symmetry was visible in the main features. However, pyramidal …

    unh-thes Repository record for In-situ study of the influence of additives on the growth behavior of copper electrodeposits on copper single crystal (opens in a new tab)

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