Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 29 for “"reverse recovery"”.
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Modeling And Optimization Of Body Diode Reverse Recovery Characteristics Of Ldmos Transistors
… research. The first is to reduce the body diode reverse recovery characteristics of a 30V LDMOS transistor without employing an additional Schottky diode, increasing the Figure of Merit, or decreasing the breakdown voltage past 30 volts. The second is to achieve 75% reduction in reverse recovery …
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Selection of Primary Side Devices for LLC Resonant Converters
… there is a history of converter failure due to reverse recovery problems with the primary switch's body diode. Before selecting CoolMOS devices for use in a LLC resonant converter, it is necessary to investigate its performance in this application. Field failures of PWM soft switching phase …
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ESD circuit design and measurement techniques
… presents a method to measure sub-nanosecond reverse recovery in wafer-level test structures. The setup uses a transmission line pulse generator with a time domain through connection to measure the device under test current. The setup is then used to measure reverse recovery in a 65 nm CMOS …
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Performance Improvement of Power Conversion by Utilizing Coupled Inductors
… from extreme duty ratios and severe rectifier reverse recovery. Utilizing coupled inductor is a simple solution to avoid extreme duty ratios, but the leakage inductance associated with the coupled inductor induces severe voltage stress and loss. An innovative solution is proposed featuring with …
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Comparative analysis of high input voltage and high voltage conversion ratio step-down converters equipped with silicon carbide and ultrafast silicon diodes
… losses, high switching losses and substantial reverse-recovery losses when minority carrier principle diodes are used. The recent introduction of silicon carbide diodes with high breakdown voltages has made possible the elimination of reverse-recovery losses at high voltage levels and as such …
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Improved Resonant Converters with a Novel Control Strategy for High-Voltage Pulsed Power Supplies
… to optimize PWM converters. Secondary diode reverse recovery is another significant issue for PWM techniques. Resonant converters can achieve ZCS or ZVS and result in very low switching loss, thus enabling power supplies to operate at high switching frequency. Furthermore, the PRC and LCC …
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CCM Totem Pole Bridgeless PFC with Ultra Fast IGBT
… pole PFC suffers from the Mosfet body diode reverse recovery issue which limits this topology adopted in the CCM high power condition. As the ultra-fast IGBT which is capable of providing 100 kHz switching frequency is available in the market, it is possible to apply the totem pole PFC in CCM …
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Novel Power Semiconductor Devices and Technologies
… upon the development of 1200V and 1700V fast recovery diodes and two MOS gated thyristor structures viz. the Accumulation Layer enhanced Emitter Switched Thyristor (ALEST) and the Clustered IGBT (CIGBT). Furthermore the insight into the principles of operation and modern optimisation …
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A zero voltage switching boost converter using a soft switching auxiliary circuit with reduced conduction losses
… has some disadvantages like very high EMI due to reverse recovery of the boost diode and high switching losses caused by hard switching of the boost switch. Many variations of the original boost topology have been suggested to overcome these problems. The Zero Voltage Transition Boost converter is …
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Cryogenic characteristics of IGBTs
… IGBTs. A generic Saber power diode model with reverse recovery was selected to model the diode cryogenic performance. Close correspondence was demonstrated between the models and experimental results over the temperature range of 50- 300 K. Saber simulation was used to examine the cryogenic …
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Design of a Hybrid Unipolar Modulation Dual-Buck Inverter using Wide Bandgap Devices
… switches due to the elimination of dead time and reverse recovery concerns by using devices such as wide-bandgap GaN HEMTS and SiC Schottky diodes. The proposed inverter topology also realizes the benefits of the dual-buck topology while using half of the number of diodes and inductors compared to …
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Experimental investigation of semiconductor losses in cryogenic DC-DC converters
… increased by 20-30 % at low temperatures whilst reverse recovery and the associated losses decreased by a factor of up to ten. The total semiconductor losses in all prototypes reduced at low temperatures, typically exhibiting a minimum value in the region of 50-100 K. The performance of the hard …
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High power wide bandgap cascode switching circuits
… JFET cascodes benefit from improved gate drive, reverse conduction and switching characteristics. SiC MOSFETs are shown to be better suited to efficient high temperature operation, while SiC JFETs are more appropriate for high current applications. Cascode switching losses are shown to be reduced …
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GaN-on-Silicon HEMTs and Schottky diodes for high voltage applications
… resistance. A thorough investigation of their reverse recovery performance and a comparison to competing technologies is also given. Several topics which concern the operation of AlGaN/GaN HEMTs are then discussed. The underlying physics of p-gate enhancement mode transistors are analysed …
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High Efficiency Single-stage Grid-tied PV Inverter for Renewable Energy System
… allows the use of power MOSFET and ultra-fast reverse recovery diode. This dissertation begins with theoretical analysis and modeling of this boost-buck converter based inverter. And the model indicates small boost inductance will leads to increase the resonant pole frequency and decrease the …
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Characterization and Failure Mode Analysis of Cascode GaN HEMT
… HEMT has high turn-on loss due to the body diode reverse recovery of the low voltage Si MOSFET and the common source inductance (CSI) of the package; while the turn-off loss is extremely small attributing to the cascode structure. With this unique feature, the critical conduction mode (CRM) soft …
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Development of advanced power factor correction techniques
… events. It also greatly reduces the bridge diode reverse recovery loss, which is one of the major switching Iosses in the conventional three-phase boost rectifier. Furthermore, it can adopt very simple soft-switching techniques even with three independent analog controllers to further improve the …
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Power Converter and Control Design for High-Efficiency Electrolyte-Free Microinverters
… superjunction MOSFETs in conjunction with zero-reverse-recovery silicon carbide (SiC) diodes to achieve ultrahigh efficiency. The performance of the topology was experimentally verified with a tested CEC efficiency of 98.6%. Due to the relatively low energy density of film capacitors compared to …
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High Bandwidth Rogowski Coils, Commutation Loop Stray Inductance, and the Si IGBT and the SiC MOSFET Based Hybrid Concept
… the impact of the freewheeling diode’s (FWD) reverse recovery during the IGBT’s turn-on phase.
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Characterization and Application of Wide-Band-Gap Devices for High Frequency Power Conversion
… GaN HEMT has high turn-on loss due to the reverse recovery charge and junction capacitor charge, and the common source inductance (CSI) of the package; while the turn-off loss is extremely small attributing to unique current source turn off mechanism of the cascode structure. With this …
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