Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 52 for “"resistive switching"”.
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Resistive switching in Cu:TCNQ thin films
… replace Flash in future CMOS generations. Resistive switching materials, which can be incorporated in simple metal-isolator-metal (MIM) structure, are especially promising due to their auspicious scaling properties. Various different materials are studied in terms of their compatibility to …
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Resistive switching in electrochemical metallization memory cells
… which consist of only three layers and whose resistive state is defined by the growth and dissolution of a metallic filament. In this study, resistive switching due to filament formation in Ag-Ge-Se- and Cu-SiO2-based memory devices was investigated. Sputter processes for the thin film …
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Resistive switching in Pt/TiO 2 /Pt
Recently, the resistive switching behavior in TiO2 has drawn attention due to its application to resistive random access memory (RRAM) devices. TiO2 shows characteristic non-volatile resistive switching behavior, i.e. reversible switching between a high resistance state (HRS) and a low resistance …
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Characterisation of Novel Resistive Switching Memory Devices
Resistive random access memory (RRAM) is widely considered as a disruptive technology that will revolutionize not only non-volatile data storage, but also potentially digital logic and neuromorphic computing. The resistive switching mechanism is generally conceived as the rupture/restoration of …
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Resistive Switching in Porous Low-k Dielectrics
… logic closer by integrating memory in the BEOL. Resistive RAM is one such memory is not transistor based and thus, does not require a silicon substrate. Thus, it offers the possibility of integration directly into the back-end reducing memory to logic distance from 1000s of µm to a 10s of nm. …
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Integration of resistive switching devices in crossbar structures
… and combines the alternative concepts of resistively switching devices, usable as nonvolatile memory elements or switches, and nano crossbar architecture, which defer these physical limits sustainably. The nano crossbar architecture consists of a functional component that is integrated …
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Monte Carlo Simulations on Resistive Switching Memristor Modeling
… retention, and superior scalability have put resistive switching memristors in the spotlight of research. This thesis presents a numerical method to determine the variability in switching that different memristors exhibit. Current-voltage relationships and cyclic voltage sweeps are gathered …
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Nonvolatile and Volatile Resistive Switching - Characterization, Modeling, Memristive Subcircuits
… CBRAM shows unique nanoionics-based filamentary switching mechanism. Compared to flash memory, the advantages of CBRAM include excellent scalability, low power consumption, high OFF-/ON-state resistance ratio, good endurance, and long retention. Besides the nonvolatile memory applications, …
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Development of Strontium Titanate Based Nanomaterials for Resistive Switching Applications
Recently, resistive switching devices have emerged as promising candidates for next generation non-volatile memory and neuromorphic computing applications. In general, resistive switching device consists of a two-terminal metal-insulator-metal structure, in which metal oxide is widely employed as …
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Resistive Switching Behavior in Low-K Dielectric Compatible with CMOS Back End Process
… latency constraints in metal interconnects. The resistive random access memories (RRAM) technology can be integrated into a complementary metal-oxide-semiconductor (CMOS) metal interconnect structure using standard processes employed in back-end-of-line (BEOL) interconnect fabrication. Based on …
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Investigation of the electroforming and resistive switching mechanisms in Fe-doped SrTiO 3 thin films
… memory technologies new concepts are needed. The resistive random access memory (RRAM), which bases on a nonvolatile and repeatable change of the resistance by external electrical stimuli, seems to be one promising candidate. Within the scope of this work, the model system Strontiumtitanate …
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Defects and Interface Engineering of SnO2 Based Nanomaterials for High Performance Memory Applications
… cell size hence the development of metal oxide switching materials is important for achieving high-performance memory devices. In this thesis, a transparent metal oxide (SnO2) was selected for developing resistive switching-based RRAMs. Three strategies for improving the resistive switching …
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Hydrogen in aluminum oxide and at the aluminum oxide/aluminum interface: an ab initio thermodynamics and Monte Carlo investigation
… it indispensable in anti-corrosion coatings, resistive switching devices, and superconducting qubits. However, point defects due to impurities like hydrogen, or intentionally added dopants, can significantly alter the properties of Al₂O₃ coatings and microelectronics. Moreover, Al₂O₃ is often …
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Initial oxidation of zirconium : chemistry, atomic structure, transport and growth kinetics
… zirconia based technologies, such as redox based resistive switching memory devices, gate dielectric for metal oxide semiconductor devices, and electrolytes for solid oxide fuel cells ...
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Electronic and Plasmonic Properties of Nano-Sized Gold/Strontium Titanate Interface
… determine the size dependence of electronic and resistive switching properties, effect of atomic structure on the orientation dependence of electronic properties, and mechanisms of plasmon-induced current enhancement. A combination of drop-casting and high temperature annealing enables …
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Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform
… scaling potential, low power consumption, high switching speed, and good retention, and endurance properties, Resistive Random Access Memory (RRAM) is one of the prime candidates to supplant current Nonvolatile Memory (NVM) based on the floating gate (FG) MOSFET transistor, which is at the end …
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Self-Assembly of Functional Helical Metallopolymers
… charge-transport through the metallopolymer and resistive switching behaviour. Finally, we employ the metallopolymer as a self-assembled scaffold, controlling the aggregation state of appended fluorophores, and thus modulating their photophysical properties. With several new design rules and …
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