Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 45 for “"resistive switching"”.
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Characterisation of Novel Resistive Switching Memory Devices
Resistive random access memory (RRAM) is widely considered as a disruptive technology that will revolutionize not only non-volatile data storage, but also potentially digital logic and neuromorphic computing. The resistive switching mechanism is generally conceived as the rupture/restoration of …
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Resistive Switching in Porous Low-k Dielectrics
… logic closer by integrating memory in the BEOL. Resistive RAM is one such memory is not transistor based and thus, does not require a silicon substrate. Thus, it offers the possibility of integration directly into the back-end reducing memory to logic distance from 1000s of µm to a 10s of nm. …
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Monte Carlo Simulations on Resistive Switching Memristor Modeling
… retention, and superior scalability have put resistive switching memristors in the spotlight of research. This thesis presents a numerical method to determine the variability in switching that different memristors exhibit. Current-voltage relationships and cyclic voltage sweeps are gathered …
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Nonvolatile and Volatile Resistive Switching - Characterization, Modeling, Memristive Subcircuits
… CBRAM shows unique nanoionics-based filamentary switching mechanism. Compared to flash memory, the advantages of CBRAM include excellent scalability, low power consumption, high OFF-/ON-state resistance ratio, good endurance, and long retention. Besides the nonvolatile memory applications, …
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Development of Strontium Titanate Based Nanomaterials for Resistive Switching Applications
Recently, resistive switching devices have emerged as promising candidates for next generation non-volatile memory and neuromorphic computing applications. In general, resistive switching device consists of a two-terminal metal-insulator-metal structure, in which metal oxide is widely employed as …
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Resistive Switching Behavior in Low-K Dielectric Compatible with CMOS Back End Process
… latency constraints in metal interconnects. The resistive random access memories (RRAM) technology can be integrated into a complementary metal-oxide-semiconductor (CMOS) metal interconnect structure using standard processes employed in back-end-of-line (BEOL) interconnect fabrication. Based on …
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Defects and Interface Engineering of SnO2 Based Nanomaterials for High Performance Memory Applications
… cell size hence the development of metal oxide switching materials is important for achieving high-performance memory devices. In this thesis, a transparent metal oxide (SnO2) was selected for developing resistive switching-based RRAMs. Three strategies for improving the resistive switching …
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Hydrogen in aluminum oxide and at the aluminum oxide/aluminum interface: an ab initio thermodynamics and Monte Carlo investigation
… it indispensable in anti-corrosion coatings, resistive switching devices, and superconducting qubits. However, point defects due to impurities like hydrogen, or intentionally added dopants, can significantly alter the properties of Al₂O₃ coatings and microelectronics. Moreover, Al₂O₃ is often …
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Initial oxidation of zirconium : chemistry, atomic structure, transport and growth kinetics
… zirconia based technologies, such as redox based resistive switching memory devices, gate dielectric for metal oxide semiconductor devices, and electrolytes for solid oxide fuel cells ...
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Electronic and Plasmonic Properties of Nano-Sized Gold/Strontium Titanate Interface
… determine the size dependence of electronic and resistive switching properties, effect of atomic structure on the orientation dependence of electronic properties, and mechanisms of plasmon-induced current enhancement. A combination of drop-casting and high temperature annealing enables …
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Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform
… scaling potential, low power consumption, high switching speed, and good retention, and endurance properties, Resistive Random Access Memory (RRAM) is one of the prime candidates to supplant current Nonvolatile Memory (NVM) based on the floating gate (FG) MOSFET transistor, which is at the end …
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Self-Assembly of Functional Helical Metallopolymers
… charge-transport through the metallopolymer and resistive switching behaviour. Finally, we employ the metallopolymer as a self-assembled scaffold, controlling the aggregation state of appended fluorophores, and thus modulating their photophysical properties. With several new design rules and …
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Neuromorphic computing systems : crystalline resistive random access memory
… thesis presents Silicon (Si)-based crystalline resistive random-access memory (crystalline RRAM) artificial synapses for neuromorphic computing. The main scaling bottleneck is poor temporal and spatial uniformity of artificial synapses. To the best of the author's knowledge, crystalline RRAM …
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Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array
… novel type of non-volatile memories, such as resistive switching memories, have lately found increased attention by both industry and academia. Resistive switching memory (ReRAM) is being considered one of the prime candidates for next-generation non-volatile memory due to relatively high …
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CHARACTERIZATION OF SNEAK PATH CURRENT EFFECT IN A PEDOT: PSS-BASED ReRAM CROSSBAR ARRAY
… presents an experimental characterization of resistive switching memory crossbar devices fabricated on glass substrates with a structure of Cu/PEDOT: PSS/Ag, with a particular focus on understanding the impact of sneak-path currents on the switching performances. Resistive memory cells, …
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The Investigation of Inorganic Co Based ReRAM Devices and Organic Cu Doped PANI-CSA Top Electrode Based ReRAM Devices
Recently, the resistance switching random access memory (ReRAM) in several MIM systems has been studied extensively for applications to the next generation non-volatile memory (NVM) devices and memristors since the scaling of conventional memories based on floating gate MOSFETs is getting …
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IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING
RESISTIVE RANDOM-ACCESS MEMORIES (RRAMS) ARE EXTENSIVELY INVESTIGATED AS A REPLACEMENT FOR FLASH MEMORIES DUE TO ITS SUPERIOR CHARACTERISTICS: HIGHER SPEED, BETTER ENDURANCE, MORE SCALABLE DESIGN AND SIMPLER FABRICATION PROCESSES. HOWEVER, DUE TO THE STOCHASTIC NATURE OF SUCH RESISTIVE SWITCHING, A …
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New ways to tune the multi-functionality of oxide thin films for memory applications
… memory applications. First, electroforming-free resistive switching (RS) with high ON/OFF ratio is realized in a novel model VAN system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow separate tailoring of nano-scale ionic and electronic channels at a high density (1012 inch-2). …
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SOFT ADAPTIVE NANOCOMPOSITES BASED ONMETALLIC CLUSTER ASSEMBLED NETWORKS FORUNCONVENTIONAL DATA PROCESSING
… substrates revealed nonlinear transport and resistive switching (RS) dynamics correlated to their structural organization and to substrate-dependent forming processes. The implantation of MCAF into PDMS enabled the realization of soft RS devices responsive to electrical, mechanical, and …
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