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Showing 1 to 20 of 20 for “"resistive random access memory"”.
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Neuromorphic computing systems : crystalline resistive random access memory
… thesis presents Silicon (Si)-based crystalline resistive random-access memory (crystalline RRAM) artificial synapses for neuromorphic computing. The main scaling bottleneck is poor temporal and spatial uniformity of artificial synapses. To the best of the author's knowledge, crystalline RRAM …
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Fabrication and Characterization of HfO2 Based Resistive Random Access Memory Devices
Current technology is dependent on the usage of a memory hierarchy. Primary components include SRAM, DRAM, and Flash. The ordering of these components in the memory hierarchy is dictated by both the cost and the performance of the components. These devices all share two distinct problems in that …
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IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING
RESISTIVE RANDOM-ACCESS MEMORIES (RRAMS) ARE EXTENSIVELY INVESTIGATED AS A REPLACEMENT FOR FLASH MEMORIES DUE TO ITS SUPERIOR CHARACTERISTICS: HIGHER SPEED, BETTER ENDURANCE, MORE SCALABLE DESIGN AND SIMPLER FABRICATION PROCESSES. HOWEVER, DUE TO THE STOCHASTIC NATURE OF SUCH RESISTIVE SWITCHING, A …
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Evaluation of the colossal electroresistance (CER) effect and its application in the non-volatile Resistive Random Access Memory (RRAM)
Flash memory, the current leading technology for non-volatile memory (NVM), is projected by many to run obsolete in the face of future miniaturization trend in the semiconductor devices due to some of its technical limitations. Several different technologies have been developed in attempt for …
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Impact of Thermal Effects and Other Material Properties on the Performance and Electro-Thermal Reliability of Resistive Random Access Memory Arrays
… with the floating gate MOSFET, alternative memory technologies like Resistive Random Access Memory (ReRAM) are gaining prominence in the scientific community. Boasting a straightforward device structure, ease of fabrication, and compatibility with CMOS (Complementary Metal-oxide …
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Nanostructuring magnetic thin films using interference lithography
… technology. Patterned magnetic media and magneto-resistive random-access memory (MRAM) can potentially fulfill this need. The technique of interference lithography is examined in the context of patterning ~100 nm size features. An interferometer is designed and built which will allow exposure of …
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SHARC : self-healing analog with RRAM and CNFETs
… fine-grained and dense integration of logic and memory. However, isolated improvements in just one area is insufficient. Rather, enabling these next-generation applications will require combining benefits across all levels of the computing stack: leveraging new devices to realize new circuits and …
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Analog-to-Digital Converters for Secure and Emerging AIoT Applications
… hardware. Analog neural networks (ANNs) with in-memory computing (IMC) using resistive random-access memory (RRAM) are promising architectures to reduce latency and increase energy efficiency for IoT devices. However, interface circuitry, including analog-to-digital converters (ADCs) between RRAM …
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Formation and Rupture of Nanofilaments in Metal/TaOx/Metal Resistive Switches
… an increased interest in the Conductive Bridge Random Access Memory (CBRAM) and Resistive Random Access Memory (RRAM) because of their excellent scaling potential, low power consumption, high switching speed, good retention and endurance properties. Although, various mechanisms have been …
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All Analog CNN Accelerator with RRAMs for Fast Inference
… the same hardware. We propose a novel design for memory cells using resistive random access memory (RRAM) and computation units utilizing the analog behavior of transistors. This circuit classifies one Cifar-10 dataset image in 6µs (160k frames/s) with 2.4µJ energy per classification with an …
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Mechanisms, Conditions and Applications of Filament Formation and Rupture in Resistive Memories
Resistive random access memory (RRAM), based on a two-terminal resistive switching device with a switching element sandwiched between two electrodes, has been an attractive candidate to replace flash memory owing to its simple structure, excellent scaling potential, low power consumption, high …
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Characterisation of Novel Resistive Switching Memory Devices
Resistive random access memory (RRAM) is widely considered as a disruptive technology that will revolutionize not only non-volatile data storage, but also potentially digital logic and neuromorphic computing. The resistive switching mechanism is generally conceived as the rupture/restoration of …
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New ways to tune the multi-functionality of oxide thin films for memory applications
… to enhance their multi-functionality for various memory applications. First, electroforming-free resistive switching (RS) with high ON/OFF ratio is realized in a novel model VAN system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow separate tailoring of nano-scale ionic and …
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Highly Efficient Neuromorphic Computing Systems With Emerging Nonvolatile Memories
<p>Emerging nonvolatile memory based hardware neuromorphic computing systems have enabled the implementation of general vector-matrix multiplication in a manner to fuse computation and memory at the same physical location. However, there remain three major challenges in designing such neuromorphic …
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Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform
… and good retention, and endurance properties, Resistive Random Access Memory (RRAM) is one of the prime candidates to supplant current Nonvolatile Memory (NVM) based on the floating gate (FG) MOSFET transistor, which is at the end of its scaling capability. The RRAM technology comprises two …
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CHARACTERIZATION OF SNEAK PATH CURRENT EFFECT IN A PEDOT: PSS-BASED ReRAM CROSSBAR ARRAY
… presents an experimental characterization of resistive switching memory crossbar devices fabricated on glass substrates with a structure of Cu/PEDOT: PSS/Ag, with a particular focus on understanding the impact of sneak-path currents on the switching performances. Resistive memory cells, …
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Scaling study of phase change memory using carbon nanotube electrodes
Demands for data storage and computer memory are growing exponentially. It is thus essential to find a new scalable, energy-efficient memory technology. We have been investigating the smallest and most energy-efficient data storage technology, based on phase change materials (PCMs) rather than …
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Functional Oxides in Optical and Electronic Applications by Atmospheric Pressure Spatial Chemical Vapour Deposition
… multiple fields, particularly in electronics and memory technology. These thin films are used in resistive random-access memory (RRAM) due to their ability to alter resistance states, which is crucial for non-volatile memory applications. With the growing demand for efficient data storage, and …
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Carbon nanotube crossbar electrodes for high performance memory devices
Item marked as restricted to the 'Administrator' Group (id=1) by Seth Robbins (srobbins@illinois.edu) on 2013-08-22T16:57:35Z Item is restricted until 2015-08-22T16:57:26Z
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Analysis of Memristor Hysteretic Systems: A Hybrid Coupled Model with emphasis on Pinching/Degrading Behavior
… model with other non-linear elements in the resistive switching process. Existing models for memristive behavior, including physical-based memristive models, phenomenological-based models, and models that employ stochastic techniques, are reviewed. The Bouc-Wen model is significant for …