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Showing 1 to 11 of 11 for “"resistive memory"”.

  1. Density Functional Simulations of Defect Behavior in Oxides for Applications in MOSFET and Resistive Memory

    … field effect transistors (MOSFETs) and resistive random-access memories (ReRAMs). The continuous scaling of CMOS has brought the Si MOSFET to its physical technology limit and the replacement of Si channel with Ge channel is required. However, the performance of Ge MOSFETs suffers from …

    cambridge Repository record for Density Functional Simulations of Defect Behavior in Oxides for Applications in MOSFET and Resistive Memory (opens in a new tab)

  2. Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform

    … and good retention, and endurance properties, Resistive Random Access Memory (RRAM) is one of the prime candidates to supplant current Nonvolatile Memory (NVM) based on the floating gate (FG) MOSFET transistor, which is at the end of its scaling capability. The RRAM technology comprises two …

    vt Repository record for Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform (opens in a new tab)

  3. CHARACTERIZATION OF SNEAK PATH CURRENT EFFECT IN A PEDOT: PSS-BASED ReRAM CROSSBAR ARRAY

    … presents an experimental characterization of resistive switching memory crossbar devices fabricated on glass substrates with a structure of Cu/PEDOT: PSS/Ag, with a particular focus on understanding the impact of sneak-path currents on the switching performances. Resistive memory cells, …

    washington Repository record for CHARACTERIZATION OF SNEAK PATH CURRENT EFFECT IN A PEDOT: PSS-BASED ReRAM CROSSBAR ARRAY (opens in a new tab)

  4. Non-volatile organic memory devices: from design to applications

    … and characterization of new non-volatile memory elements based on organic technology. During the last few decades, organic materials based devices have attracted considerable interest due to their great potential for future electronic systems. Low fabrication costs, high mechanical …

    cagliari Repository record for Non-volatile organic memory devices: from design to applications (opens in a new tab)

  5. Switched capacitor, self referencing sensing scheme for high density magneto-resistive memories

    <p>Magneto-resistive elements have possible applications in memories and sensors. Recently considerable effort has been directed towards the development of high density magneto-resistive memories. This research includes work in many areas such as obtaining cells with higher signal levels, …

    iastate Repository record for Switched capacitor, self referencing sensing scheme for high density magneto-resistive memories (opens in a new tab)

  6. In-Memory Computing Architecture for Deep Learning Acceleration

    … CPUs and GPUs. To accommodate the memory and computing requirement, multi-core systems that make intensive use of accelerators become the future of computing. Such novel computing systems incurs new challenges including architectural support for model training in the accelerators, …

    duke Repository record for In-Memory Computing Architecture for Deep Learning Acceleration (opens in a new tab)

  7. A Schottky-to-Ohmic Transition in Epitaxial Ferroelectric Hafnia Devices

    The development of analog resistive non-volatile memory elements is of great interest for future information storage technology. These devices can be used to emulate the electronic behaviour of biological synapses and neurons for neuromorphic computing or sensing applications. Hafnia is a promising …

    cambridge Repository record for A Schottky-to-Ohmic Transition in Epitaxial Ferroelectric Hafnia Devices (opens in a new tab)

  8. DESIGN AND TEST OF DIGITAL CIRCUITS AND SYSTEMS USING CMOS AND EMERGING RESISTIVE DEVICES

    … have made it a promising technology for memory, Boolean implementation, computing, and logic systems. This dissertation focuses on testing and design of such applications. In particular, we investigate on testing of memristor-based memories, design of memristive implementation of Boolean …

    siu-theses Repository record for DESIGN AND TEST OF DIGITAL CIRCUITS AND SYSTEMS USING CMOS AND EMERGING RESISTIVE DEVICES (opens in a new tab)

  9. Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array

    … novel type of non-volatile memories, such as resistive switching memories, have lately found increased attention by both industry and academia. Resistive switching memory (ReRAM) is being considered one of the prime candidates for next-generation non-volatile memory due to relatively high …

    vt Repository record for Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array (opens in a new tab)

  10. Mechanisms, Conditions and Applications of Filament Formation and Rupture in Resistive Memories

    Resistive random access memory (RRAM), based on a two-terminal resistive switching device with a switching element sandwiched between two electrodes, has been an attractive candidate to replace flash memory owing to its simple structure, excellent scaling potential, low power consumption, high …

    vt Repository record for Mechanisms, Conditions and Applications of Filament Formation and Rupture in Resistive Memories (opens in a new tab)

  11. Scaling study of phase change memory using carbon nanotube electrodes

    Demands for data storage and computer memory are growing exponentially. It is thus essential to find a new scalable, energy-efficient memory technology. We have been investigating the smallest and most energy-efficient data storage technology, based on phase change materials (PCMs) rather than …

    uiuc Repository record for Scaling study of phase change memory using carbon nanotube electrodes (opens in a new tab)