Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 14 of 14 for “"reflection high-energy electron diffraction (RHEED)"”.
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Geometric and electronic structure of reconstructed semiconductor surfaces
The combination of high-resolution photoemission spectroscopy (PES) using synchrotron radiation, and reflection high-energy electron diffraction (RHEED), along with other techniques, have been used to examine the atomic-scale geometric and electronic properties of clean and adsorbate-covered …
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Low-temperature molecular beam epitaxy of gallium arsenide Antisite incorporation and Rheed oscillations: A theoretical study
… antisite arsenic and the temporal variation of reflection high energy electron diffraction (RHEED) intensity in the low temperature (LT) molecular beam epitaxy (MBE) of (100) gallium arsenide (GaAs). A comprehensive rate equation model is proposed based on the presence and dynamics of a …
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EPITAXIAL GROWTH AND REAL-TIME ELECTRON DIFFRACTION ANALYSIS OF ADVANCED III-V SEMICONDUCTOR-BASED QUANTUM DOTS
… properties significantly affects optical and electronic performances of self-assembled Stranski-Krastanov (SK) quantum dots. Here and within the framework of the synthesis of archetype InAs/GaAs quantum dot system we have undertaken a systematic study on the evolution of dot facet orientation …
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Structural Characterization of Thin Films of Molecules on Solid Surfaces: Development of a Portable UHV Chamber to Bridge RHEED and SFG Spectroscopy Techniques
… structures, taking advantage of the strengths of reflection high-energy electron diffraction (RHEED) and sum-frequency generation (SFG) spectroscopy techniques, which include thin films of ionic liquids (ILs) deposited by physical vapor deposition and self-assembled monolayers on gold. A …
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An investigation into controlling the growth modes of ferroelectric thin films using pulsed laser deposition and RHEED
… devices, particularly in conjunction with high temperature superconductors. It has no spontaneous polarisation yet possesses a large permittivity at low temperatures that is sensitive to an electric field bias with relatively low loss. For such applications it is essential to use a low loss …
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III-nitride Semiconductors Grown By Plasma Assisted Molecular Beam Epitaxy
… and military applications due to their optoelectronic and mechanical properties. They have been synthesized successfully by many growth methods. Among them, molecular beam epitaxy (MBE) is a promising epitaxial growth method owing to precise control of growth parameters, which significantly …
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Growth and Behaviors of InN/GaN Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy
… the potential of InGaN semiconductors requires high quality materials with arbitrary In-content. To this date the growth of In-rich InGaN films is still challenging since it suffers from the low growth temperatures and many detrimental alloying problems. InN/GaN multiple quantum wells (MQWs) and …
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Angle-resolved photoemission studies of thin-film topological materials
This dissertation examines the electronic properties of topological materials in their thin film forms, including a prototypical topological insulator (TI), Bi2Te3, and a newly discovered topological Dirac semimetal (TDS), α-Sn under suitable strain. TIs and TDSs have nontrivial surface states and …
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The Structure and Composition of Metal Surfaces
Transmission electron microscopy (TEM) has become a valuable tool in the study of the structure and composition of metal surfaces, though its surface-sensitivity is known to be lower than that for reflection high energy electron diffraction (RHEED), low energy electron diffraction (LEED) and Auger …
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Excitation-Induced Ge Quantum Dot Growth on Si(100)-2X1 by Pulsed Laser Deposition
… pulsed laser deposition (PLD). <em>In situ </em>reflection-high energy electron diffraction (RHEED) and post-deposition atomic force microscopy (AFM) are used to study the growth dynamics and morphology of the QDs. A Q-switched Nd:YAG laser (λ = 1064 nm, 40 ns pulse width, 5 J/cm<sup>2</sup> …
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In Situ Surface Studies of III-V Semiconductor Compounds
… response for samples including Reflection High Energy Electron Diffraction (RHEED), thermocouples and thermography, yielding a reliable heating profile. Tunnelling tip fabrication involves manufacturing an atomically sharp tip via a two-step electrochemical etching and annealing …
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Angle-resolved photoemission and first-principles studies of topological thin films
Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. The exotic electronic properties of topological materials are of great interest for spin-related electronics and quantum computation. …
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Geometric and electronic structure of reconstructed semiconductor surfaces;high-resolution photoemission spectroscopy (PES)
The combination of high-resolution photoemission spectroscopy (PES) using synchrotron radiation and reflection high-energy electron diffraction (RHEED), along with other techniques, have been used to examine the atomic-scale geometric and electronic properties of clean and adsorbate-covered …
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Angle-resolved photoemission studies of topological thin films and superconducting heterostructures
… states in these systems. Their unique bulk electronic band structures in tandem with these topologically protected states allows these materials to potentially display many fascinating physical properties, including the quantum anomalous Hall effect, emergent phenomena such as Majorana …