Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 4 of 4 for “"reduced surface field (RESURF)"”.
-
Design and Modelling of Smart Power IC Components For the Automotive Industry
… N- and p-type devices investigated employing the Reduced Surface Field (RESURF) and Superjunction (SJ) concept to yield high breakdown voltage with low specific on-state resistance. For n-type devices, four different structures were analysed. They are XtreMOSTM (Trademark of AMI, for the rest of …
-
Multi-Kilovolt Gallium Nitride Power Transistors
… primarily from the highly non-uniform electric field (E-field) distribution within the device structure, predisposing the device to premature breakdown and limiting its operational voltage range. Consequently, the quest for higher voltage capabilities in GaN HEMTs requires the fundamental …
-
Novel Lateral MOS Controlled Power Devices and Technologies for Power Integrated Circuits
… DELDI, has been analysed in detail. The REduced VERtical Field (REVERF) effect in the DELDI technology has been revealed for the first time. The results show that this effect dominates the breakdown voltage of lateral MOS power devices with an ideal REduced SURface Field (RESURF) effect. …
-
High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
The objective of this research is the design and development of ultra-low-leakage mixed-conduction gallium nitride (GaN) diodes with reverse blocking voltage approaching parallel-plane behavior. Although GaN is a promising wide bandgap (WBG) material, experimentally reported GaN power devices …