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Showing 1 to 3 of 3 for “"recombination lifetimes"”.
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Recombination lifetimes in gamma-irradiated silicon
The small-signal recombination lifetimes of minority carriers were measured as a function of temperature in silicon before and after irradiation at room temperature by cobalt 60 gamma rays. The resistivity of the boron doped samples ranged between 10 and 5000 ohm-cm, and the resistivity of the …
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Minority carrier lifetimes in germanium on silicon heterostructures
… photoconductance measured effective lifetimes for all structures ranged from 2x103 - 2x104 cm/s. Thicker directly deposited epi-Ge samples indicated that recombination at the Ge-Si interface dominated the effective lifetime. Hydrogen passivation stability of Si and Ge surfaces in air …
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BLUE-SHIFT OF EFFECTIVE BAND-GAP IN N-I-P-I DOPING SUPERLATTICES AS A FUNCTION OF OPTICAL EXCITATION INTENSITY
… N-i-p-i doping superlattices have tunable recombination lifetimes, which can, in theory, be varied up to infinity. With low optical excitation, electrons and holes are separated spatially and therefore the recombination lifetime is very long. However, as the excitation intensity is …