Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 27 for “"reactive-ion etching (RIE)"”.
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Fabrication and applications of pillar bowtie nanoantenna arrays
This thesis reports the fabrication technique and applications of a pillar bowtie nanoantenna (p-BNA). We use different tools to fabricate our nanostructure, namely, electron lithographic tools, evaporator and plasma chambers. The theory of operation of the machines, especially electron beam …
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Diffusion of Prodan on Self -Assembled Monolayers and Grafted Polymer Layers
… polymer layers were synthesized, for diffusion studies, with surface-initiated polymerization (SIP). The results suggest that there is very little bulk translational diffusion in first layer, poly (N-isopropylacrylamide) (PNIPAM). Rather, fluorescence recovery is thought to be due to either …
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Characterization of reactive ion etching of III-V compound semiconductor materials
Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$\sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for …
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Reactive Plasma Etching of Silicon Carbide, Silicon Carbonitride, and Titanium Nitride in a Tetrafluoroethane/Oxygen Plasma
In this study we investigate the etching of the diffusion barrier between the silicon substrate and the 1ow-k dielectric material. We will use silicon carbide (SiC), silicon carbonitride (SiCN), and titanium nitride (TiN) as our diffusion layer. Using the RF plasma and the magnetron gun with …
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Optical Spectroscopy Studies of the Reactive Ion Etching of Silicon and Gallium-Arsenide in Halomethane-Based Discharges
The Reactive Ion Etching (RIE) behavior of Si and GaAs in d.c. halomethane-based discharges has been investigated using Glow Discharge Optical Spectroscopy in both emission and absorption modes. The etching of GaAs was found to be anisotropic and a carbon layer formed on the etched surfaces. A post …
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Investigation of fabrication process development for integrated optical grating structures
… ruling and photolithography, alternate fabrication techniques are investigated. Exposure by e-beam and laser are two direct write methods which are used. These methods preclude the need of a mask, require few processing steps, and can be used to write features of sizes desired for optical …
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Application of multivariable and intelligent control strategies for improving plasma characteristics in reactive ion etching
Reactive Ion Etching (RIE) is a critical technology for modern VLSI circuit fabrication and is used at many stages of the manufacturing process. Several real-time control strategies such as Proportional-Integral ( PI ) self-tuning, Linear Quadratic Gaussian ( LQG ), stochastic adaptive control, …
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Enhanced Fabrication of Microdroplet Generator Nozzle Arrays: Optimizing KOH Etching for Microfluidic Applications
… generators are useful devices with broad applications ranging from aerosolized drug delivery to three-dimensional (3D) printing-based additive manufacturing. One such technology comprises a microfabricated array of nozzles with droplet production driven by a piezoelectric transducer. The present …
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Air-gap sacrificial materials by initiated chemical vapor deposition
… sacrificial material among possible combination of twenty monomers and four crosslinkers. P(npMA-co-EGDA) was deposited onto substrates using initiated chemical vapor deposition (iCVD) technique. Spectroscopic data showed the effective incorporation of both components in the copolymer and the …
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Defect reactions and impurity control in silicon
… has covered the scientific issues of defect reactions involving dopants and impurities in Si, and the applications of this knowledge to reactive ion etching (RIE) and Fe gettering processes. The reactions among self-interstitials (Sii), vacancies (V), impurities (C, 0), and dopants (B, P) in Si …
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Design, fabrication, and characterization of a compact deep reactive ion etching system for MEMS processing
… rule of thumb for new semiconductor fabrication facilities (Fabs) is that revenues from the first year of production must match the capital cost of building the fab itself. With modem Fabs routinely exceeding $1 billion to build, this rule serves as a significant barrier to entry for groups …
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Monolithic integration of 1.55 micron photodetectors with GaAs electronics for high speed optical communications
… promise for high speed optical communication systems. For better system performance and lower cost, monolithic optoelectronic integrated circuits (OEICs) are highly desirable. A novel optoelectronic integration technology for high performance OEICs was proposed and partially developed and …
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Investigation of Surface States and Device Surface Charging in Nitride Materials Using Scanning Kelvin Probe Microscopy
… (MBE), Metal Organic Chemical Vapor Deposition (MOCVD) and Hydride Vapor Phase Epitaxy (HVPE) typically show a high surface band bending of about 1 eV. In an n-type sample with 3X1017 cm-3 carrier concentration, 1 eV upward band bending corresponds to 1.7X1012 cm-2 trapped charge density in …
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A nanostructured porous silicon based drug delivery device
… of many pharmaceuticals. The design and fabrication of a novel, electrically-addressable, porous structure-based drug delivery device for the controlled release of therapeutic proteins and peptides, are described in this thesis. <br/><br/>The initial prototype microdevice design incorporates a …
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Novel Materials and Processes for Fabrication of Integrated Photonic and Opto-Electronic Devices
Photonic devices, traditionally made in silicon, silicon dioxide and III-Vsemiconductor based materials, are the basis for many advances in the optical telecommunication area. Thin films are the foundation for these devices. Typically thin films are made from methods that involve expensive or …
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Design and manufacturing of all-dielectric optical metamaterial with gradient index of refraction
… (GRIN) materials offer the most general manipulation over wave fields of light compared to conventional refractive optics, where the light is deflected by the curved surface. The creative way to implementing GRIN optics is to construct a subwavelength structure with the electromagnetic …
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Optical Sensors for High-Temperature Pressure Measurement and Real-Time Particle Detection
… and the other for real-time particle detection. With a high melting temperature (over 2000°C), low optical loss, and excellent corrosion resistance, sapphire (α-Al₂O₃) is ideal for high temperature sensing applications. Fabry-Perot (FP) cavity with optical interrogation of pressure response. …
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Diamond nanophotonic devices for quantum information processing and sensing
… promising solid state system for quantum information processing and sensing applications. However, using NV centers to build up quantum networks for these applications faces several challenges, such as the lack of efficient interface between NVs and photons, difficulty of maintaining spin …
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Elementary processes in alkane-based reactive ion etching of III-V semiconductors
Reactive ion etching (RIE) is a process used extensively in the microelectronics industry. Recently, the use of alkane-based plasmas has been developed for the etching of compound semiconductors. However, due to the complex nature of the plasma environment, relatively little is known about the …
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Characterization of Argon and Ar/Cl<sub>2</sub> Plasmas Used for the Processing of Niobium Superconducting Radio-Frequency Cavities
… the current wet etch processes. Empirical relationships between the user-controlled external parameters and the effectiveness of Reactive Ion Etching (RIE) for the removal of surface layers of bulk niobium have been previously established. However, a lack of a physical description of the etching …
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