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Showing 1 to 20 of 103 for “"reactive ion etching"”.
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Characterization of reactive ion etching of III-V compound semiconductor materials
Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$\sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for …
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Elementary processes in alkane-based reactive ion etching of III-V semiconductors
Reactive ion etching (RIE) is a process used extensively in the microelectronics industry. Recently, the use of alkane-based plasmas has been developed for the etching of compound semiconductors. However, due to the complex nature of the plasma environment, relatively little is known about the …
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Process Characterization of the Reactive-Ion Etching of Borosilicate Glass for Microfluidic Channels
… easy to manipulate, PDMS does have its limitations. These include its tendency to swell when it comes in contact with certain chemicals and its hydrophobicity, which makes it difficult to analyze aqueous samples. Glass is an alternative material that addresses both issues. Etching is used to …
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In situ monitoring of reactive ion etching using a surface micromachined integrated resonant sensor
… technique for monitoring film thickness in the reactive etching process that incorporates a micromachined sensor. The sensor correlates film thickness with changes in resonant frequency that occurs in the micromachined platform during etching. The sensor consists of a platform that is suspended …
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Optimization of Reactive Ion Etching to Fabricate Silicon Nitride Stencil Masks in SF6 Plasma
Stencil masks are used to print ultra-high resolution patterns using helium ion/atom beam lithography and are often manufactured from thin, free-standing silicon nitride membranes. The masks have sub-200nm openings etched through the thickness of the membrane using a reactive ion etch (RIE) process …
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Application of multivariable and intelligent control strategies for improving plasma characteristics in reactive ion etching
Reactive Ion Etching (RIE) is a critical technology for modern VLSI circuit fabrication and is used at many stages of the manufacturing process. Several real-time control strategies such as Proportional-Integral ( PI ) self-tuning, Linear Quadratic Gaussian ( LQG ), stochastic adaptive control, …
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Cleaning of tin debris by reactive ion etching in a discharge-produced EUV plasma source
… is a promising candidate for the next generation of lithography technique to continue Moore's law. Moore's law has been upheld by shrinking the feature size on devices and driving the development of faster and denser integrated chips. The short wavelength (13.5±0.2 nm) of EUV light enables …
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Design, fabrication, and characterization of a compact deep reactive ion etching system for MEMS processing
… rule of thumb for new semiconductor fabrication facilities (Fabs) is that revenues from the first year of production must match the capital cost of building the fab itself. With modem Fabs routinely exceeding $1 billion to build, this rule serves as a significant barrier to entry for groups …
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Reactive ion etching of indium phosphide-based heterostructures and field-effect transistors using hydrogen bromide plasma
A new highly selective reactive ion etching process based on HBr plasma for the removal of InGaAs over InAlAs has been developed and the results are presented. The etch selectivity at a self-bias voltage of $-$100 V is over 160, which is the highest that has been reported for this material system …
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A feature-to-wafer-scale model of etch-rate non-uniformity in deep reactive ion etching/
Deep Reactive Ion Etching (DRIE) is an inherently complex dry etching process commonly used in the semiconductor manufacturing industry. This work presents a new modeling approach to capture global etch rate variation in DRIE by integrating wafer- and feature-scale nonuniformity models that are …
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Optical Spectroscopy Studies of the Reactive Ion Etching of Silicon and Gallium-Arsenide in Halomethane-Based Discharges
The Reactive Ion Etching (RIE) behavior of Si and GaAs in d.c. halomethane-based discharges has been investigated using Glow Discharge Optical Spectroscopy in both emission and absorption modes. The etching of GaAs was found to be anisotropic and a carbon layer formed on the etched surfaces. A post …
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Predictable Reactive Ion Etching of Gallium-Arsenide and Aluminum - Gallium-Arsenide in Hydrogen-Chloride/argon Radio Frequency Discharges
The reactive ion etch rate of GaAs in HCl/Ar discharges has been studied as a function of RF power, gas mixture, and applied bias. The bias voltage, defined as the difference between the substrate and the time averaged plasma floating potentials, was found to best predict the etch rate. The etch …
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A process technology for realizing integrated inertial sensors using deep reactive ion etching (DRIE) and aligned wafer bonding
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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Characterization of rf cylindrical magnetron plasmas and reactive ion etching of silicon/silicon dioxide: Its effect on radiation damage and contamination
… using electrostatic probes, optical emission spectroscopy and optical actinometry. Also the etch rates and etch profiles of Si/SiO$\sb2$ for 13.56MHz were studied for various conditions in CF$\sb4$/H$\sb2$ and CHF$\sb3$ plasmas as a function of magnetic field strength. The degree of …
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Enhanced Fabrication of Microdroplet Generator Nozzle Arrays: Optimizing KOH Etching for Microfluidic Applications
… generators are useful devices with broad applications ranging from aerosolized drug delivery to three-dimensional (3D) printing-based additive manufacturing. One such technology comprises a microfabricated array of nozzles with droplet production driven by a piezoelectric transducer. The present …
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Fabrication and applications of pillar bowtie nanoantenna arrays
This thesis reports the fabrication technique and applications of a pillar bowtie nanoantenna (p-BNA). We use different tools to fabricate our nanostructure, namely, electron lithographic tools, evaporator and plasma chambers. The theory of operation of the machines, especially electron beam …
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Titanium nitride as an electrode material for high charge density applications
… electrodes with high current densities. Traditional electrodes are not capable of delivering such high current densities. Titanium nitride as an electrode material and other techniques like reactive ion etching, platinization of titanium were studied in this thesis towards improving charge …
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Hydrophobic nanostructured glass surfaces using metal dewetting process
… a hydrophobic surface through a top down fabrication process of a nanostructure surface on a glass surface. The nanostructure is created through reactive ion etching utilizing silver as a mask. The silver mask is the result of a solid state thermal dewetting process which is controlled by varying …
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