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Showing 1 to 1 of 1 for “"radiation induced lifetime changes"”.
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Recombination lifetimes in gamma-irradiated silicon
The small-signal recombination lifetimes of minority carriers were measured as a function of temperature in silicon before and after irradiation at room temperature by cobalt 60 gamma rays. The resistivity of the boron doped samples ranged between 10 and 5000 ohm-cm, and the resistivity of the …