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Showing 1 to 19 of 19 for “"quantum-well heterostructure lasers"”.
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Operational characteristics and grating tuning of quantum well heterostructure lasers
… 1-y}$As-GaAs-In$\sb{\rm x}$Ga$\sb{\rm 1-x}$As quantum well heterostructure diode lasers showing that the large band filling range of a combined GaAs-In$\sb{\rm x}$Ga$\sb{\rm 1-x}$As quantum well makes possible a very large tuning range in external grating cavity operation. The bandfilling and …
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Reliability and Mode Behavior of AlGaAs-GaAs-InGaAs Quantum Well Heterostructure Lasers
… are presented on oxide-confined AlxGa1_xAs-GaAs quantum well heterostructures with oxide-AlxGa1_xAs distributed Bragg reflectors for electromagnetic confinement, showing the full range of reliability after 5+ years of hydrolyzation in ambient conditions of atmospheric water vapor and temperature. …
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Gain-Guided Aluminum-Gallium - Arsenide - Gallium-Arsenide Quantum-Well Heterostructure Lasers Fabricated by Hydrogenation
Semiconductor lasers have become the most widely utilized form of coherent light emitters. Aluminum gallium arsenide is the prototype material system in heterostructure laser technology. New fabrication techniques that are simple and easily implemented with present technology may have an impact on …
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Luminescence Characteristics of Single and Multiple Aluminum Gallium Arsenide - Gallium Arsenide Quantum-Well Heterostructure Lasers
Made available in DSpace on 2015-05-13T15:22:18Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 8009077.PDF: 4016559 bytes, checksum: aac657376f17eee14329b8a673590ec2 (MD5) Previous issue date: 1979
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Luminescence characteristics of single and multiple aluminum gallium arsenide-gallium arsenide quantum-well heterostructure lasers
… of single and multiple A1x Gal-x As-GaAs quantum-well heterostructure lasers grown by meta10rganic chemical vapor deposition (MO-CVD) are shown to differ markedly from those of conventional double heterojunctions because of the two-dimensional nature of the active region. The experimental …
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Selective oxidation of aluminum bearing III-V semiconductors with applications to quantum well heterostructure lasers
… native oxide prove useful in the fabrication of quantum well heterostructure laser diodes. The rate of oxide formation is sensitive to oxidation temperature and time, crystal doping, and, most dramatically the aluminum composition of the oxidizing layer. The higher aluminum composition …
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Visible-Spectrum Indium-Gallium - Phosphide - Arsenide Lasers and High-Pressure Measurements on Quantum-Well Heterostructure Lasers
… deposition (MO-CVD) grown Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructure (QWH) laser diodes and on AlAs-GaAs and Al(,x)Ga(,1-x)As-GaAs superlattices (SL's) are described. The growth and characterization of visible-light emitting In(,1-x)Ga(,x)P-In(,1-x)Ga(,x)P(,1-z)As(,z) heterostructures …
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Reliability and Mode Behavior of Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum Well Heterostructure Lasers
… on ten-stripe AlxGa1-xAs-GaAs-In yGa1-yAs quantum well heterostructure edge-emitting lasers showing results of stochastic recoupling of the laser at the Fabry-Perot interface. Scattering by epoxy or oil embedded with Al2O3 polishing compound or 10-mum diameter Al powder results in increased …
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Native Oxides on Aluminum-Bearing Iii-V Semiconductors: Material Characterization and Application to Quantum Well Heterostructure Lasers
… of the chemical stability of oxides of AlAs-GaAs heterostructures formed via atmospheric hydrolysis and by native oxidation at 400$\sp\circ$C for 3 h in a N$\sb2$ + H$\sb2$O vapor. Data indicate that atmospheric hydrolysis involves a chemical reaction that is destructive to the semiconductor …
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Selective Oxidation of Aluminum-Bearing Iii-V Semiconductors: Properties and Applications to Small-Volume Quantum Well Heterostructure Lasers
… that is comprised of $\sim$9-$\mu$m microdisk lasers that are arranged in a triangular (hexagonal close-packed) lattice arrangement. The disks are closely spaced (11-$\mu$m center-to-center spacing) such that they are strongly coupled. As a result of the coupling of the disks, the photonic …
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Indium-Gallium - Phosphide-Arsenide Quantum-Well Heterostructure Lasers Grown on Gallium-Arsenide Substrate by Liquid Phase Epitaxy (Miscibility)
… a(,x)P(,1-z)As(,z)-In(,1-x')Ga(,x')P(,1-z')As(,z')quantum-well heterostructure platelet lasers grown on (100) GaAs substrate that are capable of operating continuously at room temperature (cw, 300 K) at a wavelength of 7700 (ANGSTROM), but with a limited operating life, as described. The shortest …
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Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to small-volume quantum well heterostructure lasers
"In this work, the water-vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate small-volume semiconductor light-emitting devices. The oxidized material, native to the crystal, is mechanically and chemically stable. In addition, it is electrically insulating and has a low …
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Distributed Feedback Ridge Waveguide and Step-Graded Separate Confinement Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition
… flourished. Advancements in device physics as well as the development of coherent optical sources and high speed electronic devices have been achieved in both lattice-matched systems such as the GaAs-AlGaAs heterostructure, and strained-layer material systems such as the InGaAs-GaAs-AlGaAs …
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Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices
… and electronic devices. High Al-composition heterostructure crystals such as Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As (x $\sbsp{\sim}{>}$ 0.5) are converted into a stable native oxide at moderately elevated temperatures ($\sbsp{\sim}{>}400\ \sp\circ$C) in a water vapor saturated ambient. Dependence …
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Operating Range of Aluminum - Gallium-Arsenide Quantum-Well Heterostructure Lasers: Tunability, Power Output, and High Energy Emission (Semiconductor, Optical, Diode)
A quantum-well heterostructure (QWH) is the most capable form of semiconductor laser. The quantum-size effect (QSE), inherent in a QWH laser, improves the device performance compared to conventional double heterostructure lasers. One advantage provided by the QSE is the increased possibility for …
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Tunnel Contact Junction Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum-Well Heterostructure Lasers and Light Emitters With Native-Oxide-Defined Lateral Currents
… on AlGaAs-GaAs-InGaAs native-oxide-defined quantum well heterostructures utilizing a tunnel contact junction including edge-emitting lasers, vertical cavity surface emitting lasers, and resonant cavity light emitting diodes. These devices display improved electrical characteristics and …
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The growth of aluminum gallium arsenide/gallium arsenide graded barrier quantum well heterostructure lasers on planar and nonplanar substrates by metalorganic chemical vapor deposition
Metalorganic chemical vapor deposition (MOCVD) is a crystal growth technique which has demonstrated the capacity to deposit epitaxial layers possessing the high levels of crystalline quality and material purity required for the fabrication of state of the art devices in a variety of material …
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Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide-Indium Arsenide Quantum Dot Coupled to Quantum Well Heterostructure Lasers by Low-Pressure Metalorganic Chemical Vapor Deposition
… locate strain-matching auxiliary InGaAs layers [quantum wells (QWs)] within tunneling distance of a single-quantum-dot (QD) layer of an AlGaAs-GaAs-InGaAs-InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. The QD density is changed from 2 x 1010/cm2 …
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Resonant Raman scattering studies of III-V semiconductor microstructures
… introduced in AlAs barrier GaAs single quantum wells. Finally, we investigate ""phonon-assisted"" lasing in photopumped quantum well heterostructure lasers. Resonant Raman is the natural choice to probe this system purported to have an enhanced electronphonon interaction. For both the …