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Showing 1 to 14 of 14 for “"quantum mechanical tunneling"”.

  1. An analytical approach to quantum mechanical tunneling time in electronic devices

    … expression for the APT time through a resonant tunneling structure, two symmetrical rectangular potential barriers sandwiching a potential well, under no bias. The results of the single potential barrier traversal time are compared with that of other approaches. The APT time is inversely …

    unlv Repository record for An analytical approach to quantum mechanical tunneling time in electronic devices (opens in a new tab)

  2. Collision induced decay of metastable baby skyrmions

    … ground state. These solitons could decay by quantum mechanical tunneling. Classically, they are metastable: only a finite excitation energy is required to induce their decay. We attempt to induce soliton decay in a classical simulation by colliding pairs of solitons. We analyze the collision …

    mit Repository record for Collision induced decay of metastable baby skyrmions (opens in a new tab)

  3. Bose-Einstein Condensates in a Single Double Well Potential

    … which are coupled coherently to each other via quantum mechanical tunneling of atoms through the barrier. The state of the system can be described by two dynamical variables, the population imbalance of the two wells and their phase difference. The investigation of the dynamical response of the …

    heid-diss Repository record for Bose-Einstein Condensates in a Single Double Well Potential (opens in a new tab)

  4. Ultra-scaled III-V Vertical Tunneling Transistors

    … attention. Among all possible mechanisms, quantum mechanical tunneling has emerged as one of the most promising, and the design and demonstration of Tunnel Field-Effect Transistors (TFETs) has been an object of great interest in the past few years. In spite of intense research and promising …

    mit Repository record for Ultra-scaled III-V Vertical Tunneling Transistors (opens in a new tab)

  5. Advanced Energy-Efficient Devices for Ultra-Low Voltage System: Materials-to-Circuits

    … tunnel FETs (TFETs), which operate leveraging quantum mechanical tunneling, are investigated. A comprehensive investigation detailing electronic materials, to novel TFET device designs, to memory and logic digital circuits based upon those TFETs is provided in this work. Combined, these …

    vt Repository record for Advanced Energy-Efficient Devices for Ultra-Low Voltage System: Materials-to-Circuits (opens in a new tab)

  6. Thermal activation of superconducting Josephson junctions

    Superconducting quantum circuits (SQCs) are being explored as model systems for scalable quantum computing architectures. Josephson junctions are extensively used in superconducting quantum interference devices (SQUIDs) and in persistent-current qubit systems. Noise excitations, however, have a …

    mit Repository record for Thermal activation of superconducting Josephson junctions (opens in a new tab)

  7. Low temperature, glass-like properties of crystalline beta-alumina

    … associated with the cations in the planes. The tunneling-states model, which explains glassy properties with excitations arising from quantum mechanical tunneling of units in double-well potentials, was used to analyze the data. An energy dependent density of tunneling states with a spectrum of …

    uiuc Repository record for Low temperature, glass-like properties of crystalline beta-alumina (opens in a new tab)

  8. Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors

    … from steep switching characteristics due to the quantum-mechanical tunneling injection of carriers from source to channel, rather than by conventional thermionic emission in MOSFETs. TFETs based on group III-V compound semiconductor and Ge heterostructures further improve the ON-state current and …

    vt Repository record for Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors (opens in a new tab)

  9. Optically Controlled High Power High Speed Wide Band Gap Devices

    … illumination earlier breakdown observed due to quantum mechanical tunneling as a result of trap enhanced electric field in the depletion region. Transient response under high optical illumination with the improved device geometry was studied details to find out the load invariant switching …

    south-carolina Repository record for Optically Controlled High Power High Speed Wide Band Gap Devices (opens in a new tab)

  10. Charge Transfer at Thin-Film Modified Solid -Liquid Interfaces in the Absence of Redox-Active Moieties

    … respectively. At higher anodic potentials, quantum mechanical tunneling of the electron from the ground-state energy level of the electrolytic ionic species to the electrode Fermi level becomes rate-limiting. On the other hand, for cathodic potentials, the charge flux is limited by the …

    uiuc Repository record for Charge Transfer at Thin-Film Modified Solid -Liquid Interfaces in the Absence of Redox-Active Moieties (opens in a new tab)

  11. Charge transfer at thin-film modified solid-liquid interfaces in the absence of redox-active moieties

    … respectively. At higher anodic potentials, quantum mechanical tunneling of the electron from the ground-state energy level of the electrolytic ionic species to the electrode Fermi level becomes rate-limiting. On the other hand, for cathodic potentials, the charge flux is limited by the …

    uiuc Repository record for Charge transfer at thin-film modified solid-liquid interfaces in the absence of redox-active moieties (opens in a new tab)

  12. SYNTHESIS, ELECTRONIC AND OPTO-ELECTRONIC TRANSPORT PROPERTIES OF ATOMICALLY THIN 2D LAYERS OF MoS2, WSe2 and CuIn7Se11

    … Deposition (CVD), liquid phase exfoliation and mechanical exfoliation as well as CVT grown mechanically exfoliated WSe2 and ternary alloy of CuIn7Se11 is reported. Specifically, it is shown that in case of MoS2, the ac conductance (σ(ω); measured in the range of 10mHz < ω < 0.1 MHz) of …

    siu-theses Repository record for SYNTHESIS, ELECTRONIC AND OPTO-ELECTRONIC TRANSPORT PROPERTIES OF ATOMICALLY THIN 2D LAYERS OF MoS2, WSe2 and CuIn7Se11 (opens in a new tab)

  13. Molecular tunneling in heme proteins

    Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-27T15:50:04Z No. of bitstreams: 1 1980_reynolds.pdf: 1707453 bytes, checksum: d6a10b7efebee8db106a192f8706c7b8 (MD5)

    uiuc Repository record for Molecular tunneling in heme proteins (opens in a new tab)

  14. Exploring the reactivity of bacterial multicomponent monooxygenases

    … performed by Q, but not Hroxo, involve extensive quantum mechanical tunneling. This difference sheds light on the observation that Hrox is not a potent enough oxidant to hydroxylate methane, whereas Q can perform this reaction in a facile manner. In addition, the reaction of Hperoxo with …

    mit Repository record for Exploring the reactivity of bacterial multicomponent monooxygenases (opens in a new tab)