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Showing 1 to 6 of 6 for “"quantum dash"”.
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Injection locking characteristics of indium arsenide quantum dash lasers
… locking characteristics was performed on an InAs Quantum Dash (QDash) semiconductor laser for the first time. The linewidth enhancement factor(α-parameter) of a QDash laser was measured using an injection locking technique that takes advantage of the asymmetry of the injection range. Studies were …
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Numerical Simulation and Experimental Investigation of Quantum Dash Lasers at Elevated Temperatures: Design and Operation of Monolithic InAs/InP Quantum Dash Ridge Laser Diodes Operating in the C-Band
… candidate device, a mode-locked ridge waveguide quantum dash laser. Quantum dash and dot gain media both exhibit spontaneous mode-locking, reduced sensitivity of their performance to temperature, and lower threshold current densities. Dashes additionally offer higher peak gain and broader gain …
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Characterization of the Dynamics of Optically-Injected Nanostructure Lasers
… In this dissertation, the optical-injection of quantum-dash and quantum-dot Fabry-Perot semiconductor lasers is investigated in the context of modeling the impact of their characteristically large nonlinear gain component. The impact of the large degree of gain compression on the differential …
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Morphology of InGaAs Multilayer Nanostructure on GaAs High-Index Surfaces
… evolution. Ordered arrays of InGaAs quantum dots were demonstrated on GaAs(311)B. The ordering patterns depended on the thickness of GaAs interlayer between InGaAs Quantum Dots (QDs). With an increased interfacial thickness, a transition from two dimensional (2D) lateral ordering to …
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External control of semiconductor nanostructure lasers
… semiconductor nanostructure laser diodes such as quantum-dot and quantum-dash are key optoelectronic candidates for many applications such as data transmitters in ultra fast optical communications. This is mainly due to their unique carrier dynamics compared to conventional quantum-well lasers …
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Epitaxie von InAs-Quanten-Dash-Strukturen auf InP und ihre Anwendung in Telekommunikationslasern
… mit einer klaren Vorzugsorientierung, sogenannte Dashes. Verschiedene Wachstumsparameter, wie die Menge an deponiertem InAs, der Strukturaufbau oder der Wachstumsmodus, lassen eine Beeinflussung der Emissionseigenschaften zu, die mittels Photolumineszenz (PL)-Spektroskopie untersucht wurden. So …