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Showing 1 to 5 of 5 for “"pulsed measurement"”.

  1. Reliability, power dissipation, sensing, and thermal transport in carbon nanomaterials and devices

    … of carbon nanotube transistors by developing a pulsed measurement technique to suppress hysteresis for carbon nanotube (CNT) mobility measurements in air, in vacuum, and over a wide (80 – 453 K) temperature range. The use of this pulsed measurement technique provides a route towards measuring …

    uiuc Repository record for Reliability, power dissipation, sensing, and thermal transport in carbon nanomaterials and devices (opens in a new tab)

  2. Characterization of Graphene Field-Effect Transistors for High Performance Electronics

    … down to 100-nm channel length with the aid of pulsed-measurement techniques. Transistors RF performance and bias dependence of high frequency behavior is explored. Novel fabrications methods are developed to improve FET performance. A technique is developed to grow metal-oxides on graphene …

    columbia-diss Repository record for Characterization of Graphene Field-Effect Transistors for High Performance Electronics (opens in a new tab)

  3. Electrical and thermal characterization techniques for carbon nanotube transistors and networks

    In this study, pulsed measurement techniques to suppress hysteresis in carbon nanotube (CNT) field-effect transistor (CNTFET) transfer characteristics are demonstrated. As hysteresis is reduced, both forward and backward gate voltage sweeps move toward a common, unique central transfer …

    uiuc Repository record for Electrical and thermal characterization techniques for carbon nanotube transistors and networks (opens in a new tab)

  4. Very High Frequency EPR: Instrument and Applications

    … approach, including auxiliary 2-4 GHz pulsed measurement, has shown that a single set of spin Hamiltonian parameters describes the spin system of DBT over a microwave frequency span of 3 to 95 GHz. These newly available, detailed, and accurate data provide a valuable opportunity to …

    uiuc Repository record for Very High Frequency EPR: Instrument and Applications (opens in a new tab)

  5. Towards high performance graphene nanoelectronics: materials, contacts and interfaces

    … insulator interface by using a nanosecond-range pulsed characterization technique. Due to gate dielectric imperfections, the drain current degrades, suggesting the presence of charge trapping mechanisms. These charge trapping effects produce threshold voltage instability (hysteresis) in the …

    uiuc Repository record for Towards high performance graphene nanoelectronics: materials, contacts and interfaces (opens in a new tab)