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Showing 1 to 20 of 170 for “"power devices"”.

  1. GaN-based vertical power devices

    Power electronics based on Gallium Nitride (GaN) is expected to significantly reduce the losses in power conversion circuits and increase the power density. This makes GaN devices very exciting candidates for next-generation power electronics, for the applications in electric vehicles, data …

    mit Repository record for GaN-based vertical power devices (opens in a new tab)

  2. Junction Based Gallium Nitride Power Devices

    Power electronics plays an important role in many energy conversion applications in modern society including consumer electronics, data centers, electric vehicles, and power grids, etc. The key components of power electronic circuits are power semiconductor devices including diodes and transistors, …

    vt Repository record for Junction Based Gallium Nitride Power Devices (opens in a new tab)

  3. Robustness of Gallium Nitride Power Devices

    Power device robustness refers to the device capability of withstanding abnormal events in power electronics applications, which is one of the key device capabilities that are desired in numerous applications. While the current robustness test methods and qualification standards are developed …

    vt Repository record for Robustness of Gallium Nitride Power Devices (opens in a new tab)

  4. Discrete Gaussian Sampling for Low-Power Devices

    Sampling from the discrete Gaussian probability distribution is used in lattice-based cryptosystems. A need for faster and memory-efficient samplers has become a necessity for improving the performance of such cryptosystems. We propose a new algorithm for sampling from the Gaussian distribution …

    washington Repository record for Discrete Gaussian Sampling for Low-Power Devices (opens in a new tab)

  5. Theoretical modelling of two wave-power devices

    Many wave energy devices are currently studied. In this thesis we focus on two specific devices: the Oscillating Water Column (OWC), and the buoys. In the first part of this thesis we examine the effects of coastline geometry on the performance of an OWC. Under the assumption of inviscid …

    mit Repository record for Theoretical modelling of two wave-power devices (opens in a new tab)

  6. Development of vertical bulk gallium nitride power devices

    Gallium nitride (GaN) is a promising material for power electronics due to its outstanding properties, such as high critical electric field and large bandgap. Despite its superior intrinsic properties, fabrication processes and technology for vertical GaN power electronics is still not as mature as …

    mit Repository record for Development of vertical bulk gallium nitride power devices (opens in a new tab)

  7. Role of interface configuration in diamond-related power devices

    Durante los años transcurridos en el desarrollo de esta tesis, la generación de energía eléctrica mundial habrá crecido a un ritmo medio anual del 3.6%1, que refleja las crecientes necesidades de la sociedad en términos de suministro eléctrico (voltaje, densidad de potencia, frecuencia de uso, …

    cadiz Repository record for Role of interface configuration in diamond-related power devices (opens in a new tab)

  8. Trap modelling and injection effects in GaN power devices

    GaN power devices are promising candidates for the next generation of high efficiency power semiconductor devices. Their material and device properties enable power conversion systems that are potentially smaller, lighter, less complex, cheaper and more efficient than silicon based solutions. While …

    cambridge Repository record for Trap modelling and injection effects in GaN power devices (opens in a new tab)

  9. Vertical gallium nitride power devices on bulk native substrates

    Lateral power devices based on AlGaN/GaN hetero-structures have achieved excellent performance in the medium power range applications. However for higher voltage higher current switches, a vertical structure is preferred since its die area does not depend on the breakdown voltage. This thesis …

    mit Repository record for Vertical gallium nitride power devices on bulk native substrates (opens in a new tab)

  10. Novel Structures for Scalable Vertical Gallium Nitride Power Devices

    Solid state electronic devices have been the backbone of modern power systems for decades. However, as we enter an era fuelled by renewable energy and defined by pervasive electrification, novel power devices must be developed to address the increasingly stringent demands for high power density and …

    mit Repository record for Novel Structures for Scalable Vertical Gallium Nitride Power Devices (opens in a new tab)

  11. Deceptive Environments for Cybersecurity Defense on Low-power Devices

    … useful tool for deception-based security. Low-powered devices, such as the Raspberry Pi, have found a natural home with some categories of honeypots and are being embraced by the honeypot community. Due to the low cost of these devices, new techniques are being explored to employ multiple …

    vt Repository record for Deceptive Environments for Cybersecurity Defense on Low-power Devices (opens in a new tab)

  12. Methodology for Switching Characterization of Power Devices and Modules

    In modern power electronics systems there is a growing trend to replace discrete devices with integrated power electronic modules (IPEMs). In this way, several components can be replaced by a single component. By using prefabricated building blocks, the engineer simplifies the design process, …

    vt Repository record for Methodology for Switching Characterization of Power Devices and Modules (opens in a new tab)

  13. LATERAL POWER DEVICES AND TECHNOLOGIES FOR HIGH VOLTAGE INTEGRATED CIRCUITS

    The prime objective of a High Voltage Power Integrated Circuit (HVPIC) is to integrate high power and low power devices on the same wafer. Such a Power Integrated Circuit (PIC) benefits in cost, weight, functionality and reliability. A Lateral MOS controlled Power Device is a key component in such …

    de-montfort Repository record for LATERAL POWER DEVICES AND TECHNOLOGIES FOR HIGH VOLTAGE INTEGRATED CIRCUITS (opens in a new tab)

  14. Characterization and modeling of silicon and silicon carbide power devices

    Power devices play key roles in the power electronics applications. In order for the power electronics designers to fully utilize the performance advantages of power devices, compact power device models are needed in the circuit simulator (Saber, P-spice, etc.). Therefore, it is very important to …

    vt Repository record for Characterization and modeling of silicon and silicon carbide power devices (opens in a new tab)

  15. Electrical Integration of SiC Power Devices for High-Power-Density Applications

    … has led to the fast development of high-power-density power electronics converters. High-switching-frequency and high-temperature operations are the two key factors towards this target. Both requirements, however, are challenging the fundamental limit of silicon (Si) based devices. The …

    vt Repository record for Electrical Integration of SiC Power Devices for High-Power-Density Applications (opens in a new tab)

  16. Novel Lateral MOS Controlled Power Devices and Technologies for Power Integrated Circuits

    Power microelectronics can be considered as a combination of semiconductor high voltage integrated circuits, smart power discrete devices, low voltage circuits, and the fabrication technologies with the feature of high integrated density. It is always desirable that a lateral MOS controlled power

    de-montfort Repository record for Novel Lateral MOS Controlled Power Devices and Technologies for Power Integrated Circuits (opens in a new tab)

  17. Hybrid-gate deep depletion mosfet high-k zro2/diamond-based power devices

    The improvement of power electronic devices, making them durable and reliable in high power environments is the key to the efficient low-carbon electrical energy production and distribution for our future energy system, eliminating the auxiliary systems and reducing the losses. Despite silicon is a …

    cadiz Repository record for Hybrid-gate deep depletion mosfet high-k zro2/diamond-based power devices (opens in a new tab)

  18. Medium voltage extreme fast charger based on novel medium voltage SiC power devices

    … modular single-phase single-stage isolated ac/dc power converter in each phase. Novel 7.2kV/60A SiC Austin SuperMOS devices are used as the medium voltage power electronic switches and soft-switching over the entire range of grid voltage has been ensured by a novel variable switching frequency …

    texas Repository record for Medium voltage extreme fast charger based on novel medium voltage SiC power devices (opens in a new tab)

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