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Showing 1 to 2 of 2 for “"post -oxidation annealing"”.
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The Si/SiO(2) Interface Roughness
… reviewed. With this technique, the effect of post-oxidation annealing on Si(100)/SiO$\sb2$ and Si(111)/SiO$\sb2$ interface roughness has been investigated. It was found that as-grown $\sim$6nm thick silicon(100) dioxides generate a very high roughness ($\sigma \sim$ 10-15A). However, this …
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The Si/SiO2 Interface Roughness
… reviewed. With this technique, the effect of post -oxidation annealing on Si(l00)/Si02 and Si(lll)/Si02 interface roughness has been investigated. It was found that as grown ~6mm thick silicon(lOO) dioxides generate a very high roughness (σ ~ 10- 15A). However, this roughness can be removed by …