Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 16 of 16 for “"pn-junctions"”.
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An investigation into six-fold domain wall vertices in improper ferroelectrics, and their potential as one dimensional pn-junctions
… of naturally forming, one-dimensional PN-diodes. This work is still ongoing. <br/><br/>Finally, a new improper ferroelectric system, the hexagonal tungsten bronze CsNbW2O9, has been characterised through piezoresponse force microscopy (PFM), whereupon six-fold domain wall vertex …
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2D material devices for low power logic and memory applications
… Germanium Selenide (GeSe) were investigated. The pn junctions based on GeSe/MoS2 heterostructures were fabricated and showed excellent rectifying characteristics, demonstrating for the first time the viability of using GeSe/MoS2 heterostructures as 2D pn junctions. In the second project, 2D …
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GaN-based vertical power devices
… of the off-state leakage current in vertical GaN pn diodes on Si, sapphire and GaN substrates, by experiments, analytical calculations and TCAD simulations. Variable-range-hopping through threading dislocations was identified as the main off-state leakage mechanism in these devices. The design …
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Elektronischer Transport in Graphen
… developed that allows the creation of graphene pn-junctions by chemical doping. These pn-junctions are investigated at high magnetic fields up to 12 T and low temperatures (QHE regime). Due to edge channel interaction at the p-n interface Hall resistances h/e^2, h/3e^2, h/15e^2 can be observed, …
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Novel dopants for n-type doping of electron transport materials: cationic dyes and their bases
… increase the built-in potential of Schottky- or pn-junctions.
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Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition
… include twin-plane superlattices, axial pn-junctions, nanowire lasers, and the modulation of nanowire growth direction against an impeding barrier and varying substrate conditions.
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Designing a Simulator for an Electrically-Pumped Organic Laser Diode
… materials to fabricate electronic devices like PN Junctions, LEDs, and FETs. These materials have several benefits over traditional inorganic semiconductors including their mechanical flexibility, reliance on renewable resources, and inexpensive large-scale manufacturability. Despite the …
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A 0.45 V low power high PSRR subthreshold CMOS voltage reference
… (BGR) add the forward bias voltage across a PN junction with a voltage that is proportional to absolute temperature to produce an output that is insensitive to changes in temperature. BGRs generate a nearly temperature independent reference, of about 1.25 V, and therefore they require a …
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Towards high-bandwidth scanning impedance imaging
… dielectrics, buried/surface conductors and PN junctions could be detected. This thesis takes an initial step toward high-bandwidth electroquasistatic (EQS) imaging by exploring the use of high-frequency imaging. When combined with impedance sensors having a high spatial density, it could be …
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Low-pressure chemical vapor deposition by thermolysis of disilane for low-temperature fabrication of pn junction solar cells
… to deposit thin-films of silicon and fabricate pn junction photovoltaic devices using disilane as the source gas. This work represents the first reported work on using disilane for fabrication of photovoltaic devices. Films doped with diborane showed high growth rates of approximately 45-150 …
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Multi-Dimensional Dopant Profiling With Atomic Resolution by Scanning Tunneling Microscopy
… (CITS) were acquired across the lateral PN junctions of Si devices. Two-dimensional dopant (carrier) profiles were extracted from CITS data with 5A resolution. Moreover, the N and P type dopant induced features were observed in filled state and empty state STM images. The donor (Arsenic) …
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Hybrid plasma-semiconductor devices
… substituting a plasma for the collector of an npn bipolar junction transistor. Designated as the plasma bipolar junction transistor (PBJT), this optoelectronic device relies on the correspondence between the properties of a low temperature, nonequilibrium plasma and those of the electron-hole …
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Characterization of Dopant Diffusion in Bulk and lower dimensional Silicon Structures
… tight control of doping levels and formation of pn junctions is required. Therefore, deeper understanding of the lateral component of the diffusion mechanisms and interface effects in these lower dimensional structures compared to the bulk is necessary. This work focuses on studying the dopant …
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Characterization of epitaxial semiconductor films by scanning tunneling microscopy at ambient pressure
… imaged by STM for the first time in air, and the pn junctions located to within 20 nm. The apparent topographic contrast in these images is explained in terms of an electronic contrast mechanism associated with the carrier type. Current-voltage (IV) characteristics of the STM tunnel junction are …
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Investigation of InAs/GaSb superlattice based nBn detectors and focal plane arrays
… are based on interband transitions in pn junctions made of mercury cadmium telluride (MCT) or InSb, and intersubband transistions in quantum well infrared detector(QWIP). However, lack of spatial uniformity over larger area and difficulties with the material growth plagues MCT …
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Reducing Off-State Current in P-Type Metal Oxide Thin Film Transistors
… TFTs. Further, good-quality c-Si/Cu<sub>2</sub>O PN junctions are also fabricated and used to efficiently trial EBL materials. NiO and MoO<sub>3</sub> EBL materials are shown to moderately improve the on-off ratio by 141 % from 5.1 to 12.3, while CuI and WO<sub>3</sub> show no improvement. It was …