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Showing 1 to 1 of 1 for “"pn-Übergänge"”.

  1. Elektronischer Transport in Graphen

    … developed that allows the creation of graphene pn-junctions by chemical doping. These pn-junctions are investigated at high magnetic fields up to 12 T and low temperatures (QHE regime). Due to edge channel interaction at the p-n interface Hall resistances h/e^2, h/3e^2, h/15e^2 can be observed, …

    aachen Repository record for Elektronischer Transport in Graphen (opens in a new tab)