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Showing 1 to 5 of 5 for “"plasma bipolar junction transistor"”.

  1. Observation of plasma sheath modulation in the plasma bipolar junction transistor

    Modulation of the plasma sheath in a plasma bipolar junction transistor (PBJT) is observed for base inputs of less than one volt. Using the recorded data, along with a collisional, high-voltage sheath model developed herein, a 359% increase in the secondary electron emission coefficient of the …

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  2. Novel designs, materials and techniques in plasma bipolar junction transistor (PBJT) fabrication and testing

    … obtained by other techniques. The collector plasma generated was analyzed using a Princeton Instruments PI-MAX 3 intensified charge-coupled device (ICCD) camera. As a further improvement on the PBJT design, fabrication using a novel laterally-doped configuration is underway and initial work …

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  3. Performance and analysis of the plasma bipolar junction transistor: Control of the surface electrical properties

    A new configuration of plasma bipolar junction transistor (PBJT) based on an epitaxial wafer has been designed and fabricated. Its electrical properties and the collector plasma densities are characterized using electrical and optical methods. Using this device as a platform, coupling of the …

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  4. Hybrid plasma-semiconductor devices

    A hybrid plasma-semiconductor phototransistor has been realized by substituting a plasma for the collector of an npn bipolar junction transistor. Designated as the plasma bipolar junction transistor (PBJT), this optoelectronic device relies on the correspondence between the properties of a low …

    uiuc Repository record for Hybrid plasma-semiconductor devices (opens in a new tab)