Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"planar nanowire"”.
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Planar nanowire high electron mobility transistor and down-scaling of planar nanowire
Monolithically grown planar nanowire (NW) high electron mobility transistors (NW-HEMTs) have been demonstrated with self-aligned <110> planar GaAs NW channels capped by a thin film AlGaAs barrier. The planar NW-HEMTs exhibit uniform and scalable DC characteristics; and resolve the electrical …
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Array-based planar nanowire high electron mobility transistor
III-V semiconductor nanowire (NW) field-effect transistors (FETs) are strong candidates for future low-power digital/RF IC. Bottom-up grown NWs via the vapor-liquid-solid (VLS) mechanism are of particular interest for NW-FET application because the as-grown 3D NW structures require no lithography …
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Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy
… on thin film or in-situ doping of vertical nanowire (NW). However, fabricating lateral junctions on thin film are less effective due to the difficulties in defining abrupt junction geometry and escaping physical damages from the post-doping process. Utilizing monolithically grown lateral p-n …
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Selective lateral nano-epitaxy for manufacturable nanowire electronics
… on vapor-liquid-solid (VLS) growth of III-V planar nanowires and their electronic device applications. III-V materials, especially high-In-content InGaAs, are considered as a very promising n-channel material candidate for post-Si complementary metal-oxide-semiconductor (CMOS) technology due …
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Planar GaAs nanowire arrays for nanoelectronics: controlled growth, doping, characterization, and devices
… one-dimensional semiconductor structures, or nanowires. VLS nanowires are formed via a chemical or physical deposition process, where a metallic nanoparticle (seed) facilitates the growth. Nanowire growth diameter is strongly correlated to seed size, therefore top-down patterning can control …
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Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2
Nano materials such as nanowires and 2-dimensional (2-D) molybdenum disulfide (MoS2) have received tremendous attention over the past few decades. Numerous applications have been proposed such as nanowire MOSFETs, nanowire electrical generators, nanowire biosensors, nanowire single photon …
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An Investigation of the Structure, Pinning and Magnetoresistance of Domain Walls in Ni81Fe19 Planar Nanowires
… and development of Ni81Fe19 thin films and planar nanowire structures has attracted considerable interest in recent years; in terms of improving the fundamental understanding of the basic physical processes and also for the development of potential applications. Example applications include …