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Showing 1 to 5 of 5 for “"pinhole defects"”.

  1. Analysis of Sans Transmission Data from Highly Absorbing Samples with Thickness Non-Uniformity and Pinhole Defects

    Made available in DSpace on 2017-07-06T18:42:23Z (GMT). No. of bitstreams: 3 Barber_Nathan_R_MS.pdf: 32484155 bytes, checksum: c0e4681232f1c1f64f9d779adf81a73e (MD5) Barber_Nathan_R_MS_ABS.pdf: 611841 bytes, checksum: 2a58b6037413e2eb8a47b78e4ea8431b (MD5) license.txt: 4813 bytes, checksum: …

    uiuc Repository record for Analysis of Sans Transmission Data from Highly Absorbing Samples with Thickness Non-Uniformity and Pinhole Defects (opens in a new tab)

  2. Plasma-Material Interactions: A Langmuir Probe Analysis of a Cylindrical SiO(2) Deposition System and a Computational Study Using VFTRIM3D

    … This limit is found to be caused by cracks and pinhole defects across the $\rm SiO\sb2$ film that permit uninhibited gas flow directly to the PET bottle.

    uiuc Repository record for Plasma-Material Interactions: A Langmuir Probe Analysis of a Cylindrical SiO(2) Deposition System and a Computational Study Using VFTRIM3D (opens in a new tab)

  3. Growth defects in CrN/NbN coatings deposited by HIPIMS/UBM techniques

    … imperfections even though the overall number of defects can be significantly lower compared to, for example, arc deposited coatings of similar thickness. Defects can degrade the coating performance thus any kind of defect is undesirable. To better understand the nature of these imperfections and …

    sheffield-hallam Repository record for Growth defects in CrN/NbN coatings deposited by HIPIMS/UBM techniques (opens in a new tab)

  4. Understanding the Structure and Properties of Self-Assembled Monolayers for Interfacial Patterning

    This dissertation describes the impact of defects on monolayer properties for self-assembled monolayers (SAMs) created by interfacial patterning methods. When forming a two-dimensional interfacial pattern with n-alkanethiols on gold, the desired electrochemical properties are those of a …

    vt Repository record for Understanding the Structure and Properties of Self-Assembled Monolayers for Interfacial Patterning (opens in a new tab)

  5. Development of graphene growth surfaces for III-V semiconductors

    … we exposed graphene to an Ar-ion beam to create pinhole defects. This allows the desorption of native oxides at elevated temperature and the nucleation of GaAs at defect sites followed by lateral overgrowth. The epilayer is exfoliated from the growth substrate revealing the nucleation of the …

    cambridge Repository record for Development of graphene growth surfaces for III-V semiconductors (opens in a new tab)