Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 8 of 8 for “"phemt"”.
-
Modelling of advanced submicron gate InGaAs/InAIAs pHEMTS and RTD devices for very high frequency applications
… High Electron Mobility Transistors (pHEMTs) have shown outstanding performances, which makes them prominent in high frequency mm-wave and submillimeter-wave applications. However, conventional InGaAs/InAlAs pHEMTs have major drawbacks, i.e., very low breakdown voltage and high gate …
-
The design of a high efficiency RF power amplifier for an MCM process
… 2.3 GHz PCB amplifier using an enhancement-mode pHEMT device that achieves 68.9% PAE at 30 dBm output power is presented. Analysis of heat management, die connection parasitics, and transmission line structures in the context of the MCM process is performed to show that a similar design could …
-
Modulation-Doped Field-Effect Transistors for High-Power Microwave Applications
… drain-sides cap recess distance on InGaAs/GaAs PHEMT device performance at both dc and rf frequencies is investigated. This investigation is achieved though the development of a four-layer electron beam resist technique and sequential wet and dry selective etching. A high linearity of device …
-
RF breakdown effects in microwave power amplifiers
… related to breakdown in the Transcom TC2571 PHEMT, and the effects this has on the Draper Laboratory 2.3 GHz microwave power amplifier in which the transistor is used. Characterization of breakdown was performed under DC and RF drive conditions, and shows the surprising role of impact …
-
Effect of varying gate-drain distance on the RF power performance of pseudomorphic high electron mobility transistors
… High Electron Mobility Transistors (PHEMTs) are widely used in satellite communications, military and commercial radar, cellular telephones, and other RF power applications. One key figure of merit in these applications is RF power output. Increasing the gate-to-drain length (LRD) of …
-
Modélisation du comportement non-linéaire de transistors hyperfréquences avec polynômes multivariées optimisés par essaims particulaires
… système. Un transistor hyperfréquences de type pHEMT (pseudomorphic High Electron Mobility Transistor) en GaAs a été modélisé avec cette nouvelle approche. Les résultats obtenus montrent que le modèle a bien appris la dynamique du système et est capable de modéliser le comportement …
-
Ultra-low power radio transceiver for wireless sensor networks
… pseudomorphic high electron mobility transistor (PHEMT). The OOK radio transceiver successfully operates at the centre frequency of 10GHz for compact antenna and with ultra-low power consumption and shows an output power of -10.4dBm for the transmitter, an output voltage of 1mVp-p at an operating …
-
Design of Novel Devices and Circuits for Electrostatic Discharge Protection Applications in Advanced Semiconductor Technologies
… is finally developed based on depletion-mode pHEMT with adjustable trigger voltage, reasonable leakage current and high robustness.