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Showing 1 to 20 of 30 for “"perpendicular magnetic anisotropy"”.

  1. Antiferromagnetic nanodiscs with perpendicular magnetic anisotropy for biological applications

    Abstract Magnetic particles have been widely implemented across research areas in liquid and biological environments, such as cancer therapy, drug delivery and cell sorting. Perpendicularly magnetised (PM) synthetic antiferromagnetic (SAF) particles exhibit a range of desirable properties that make …

    cambridge Repository record for Antiferromagnetic nanodiscs with perpendicular magnetic anisotropy for biological applications (opens in a new tab)

  2. Perpendicular magnetic anisotropy in ion beam sputtered Co/Ni multilayers

    Co/Ni multilayers display perpendicular magnetic anisotropy and have applications in magnetic devices that could lead to a large increase in the density of magnetic storage. Co/Ni 10-(2 Å Co/ 8Å Ni) and 10-(2 Å Co/ 4 Å Ni) multilayers were deposited with ion beam sputtering on either ion beam …

    mit Repository record for Perpendicular magnetic anisotropy in ion beam sputtered Co/Ni multilayers (opens in a new tab)

  3. Self-assembly of ferromagnetic micro/nano-particles with perpendicular magnetic anisotropy

    Magnetic particles offer an interesting platform for self-assembly, as their dipolar interactions and response to magnetic fields can be used to drive and manipulate assembly. Many magnetic particles used so far in these applications are quite simple in their properties, such as iron oxide …

    cambridge Repository record for Self-assembly of ferromagnetic micro/nano-particles with perpendicular magnetic anisotropy (opens in a new tab)

  4. Fabrication and characterization of perpendicular magnetic anisotropy thin-film CoCrPt grown on a Ti underlayer

    … as a memory storage technology because of its perpendicular magnetic anisotropy (PMA) characteristics. An underlayer can be used to ensure the out-of-plane magnetization required for PMA functionalities. Ti, with a lattice constant of a = 2.95 Å can be used to encourage uniaxial c-axis growth …

    mit Repository record for Fabrication and characterization of perpendicular magnetic anisotropy thin-film CoCrPt grown on a Ti underlayer (opens in a new tab)

  5. Geometrical control of domain walls and the study of domain wall properties of materials with perpendicular magnetic anisotropy

    Magnetic based devices such as hard disk drives (HDDs) are widely used in the computer industry because of their high memory capacity, non-volatility and low cost compared to semiconductor-based solid state disk drives (SSDs). However, they also suffer from low energy efficiency and low speed, due …

    mit Repository record for Geometrical control of domain walls and the study of domain wall properties of materials with perpendicular magnetic anisotropy (opens in a new tab)

  6. Voltage programmable materials

    … in solid-state devices. Here, we focus on ferromagnetic metal/metal-oxide bilayers that exhibit strong perpendicular magnetic anisotropy derived from interfacial oxygen hybridization. In these materials, we directly observe, in situ voltage-driven oxygen migration at room temperature and show …

    mit Repository record for Voltage programmable materials (opens in a new tab)

  7. Spin and Charge Transport in Metallic Ferrimagnets and Disordered Magnetic Oxides

    … thin film synthetic ferrimagnets and disordered magnetic oxides for applications in spintronic devices. Due to the antiferromagnetic exchange interaction, ferrimagnetic materials offer the ultrafast dynamics of the antiferromagnetic exchange, with a net magnetization that can be influenced …

    denver Repository record for Spin and Charge Transport in Metallic Ferrimagnets and Disordered Magnetic Oxides (opens in a new tab)

  8. Growth and Characterization of Polycrystalline Rare-Earth Iron Garnet Films and Heterostructures

    … iron garnets, a class of insulating ferrimagnetic oxides, are particularly well suited to this application as the anisotropy, magnetization, magnetostriction, and damping can be easily controlled through selection of rare-earth ion and substrate. Previous work on garnets has focused on …

    mit Repository record for Growth and Characterization of Polycrystalline Rare-Earth Iron Garnet Films and Heterostructures (opens in a new tab)

  9. Pulsed Laser Deposited Iron Garnet Thin Films for Spintronics

    … their low Gilbert damping and their growth with perpendicular magnetic anisotropy (PMA) which promote fast domain wall dynamics. Additionally, selection of rare earth ion and substitution of cations in various sublattices of iron garnets enables tuning of their saturation magnetization, …

    mit Repository record for Pulsed Laser Deposited Iron Garnet Thin Films for Spintronics (opens in a new tab)

  10. Room temperature spin-orbit torque switching induced by a topological insulator

    … switching. However, so far current-induced magnetic switching with topological insulators has been observed only at cryogenic temperatures. Whether the topologically protected electronic states in topological insulators can benefit to spintronic applications at room temperature remains a …

    mit Repository record for Room temperature spin-orbit torque switching induced by a topological insulator (opens in a new tab)

  11. Spin-orbit torque switching of compensated ferrimagnetic cobalt-terbium alloys

    … there has been interest in using antiferromagnetically coupled materials instead of ferromagnetic materials to store information. Compared with ferromagnetic materials, antiferromagnetically coupled systems exhibit faster dynamics and are more stable against external magnetic field …

    mit Repository record for Spin-orbit torque switching of compensated ferrimagnetic cobalt-terbium alloys (opens in a new tab)

  12. Practical Pathways to Efficient MRAM: Spin-Orbit Torques, Low-Damping, and Anomalous Hall Conductivity in Polycrystalline Materials

    … are multiple pathways forward to next generation magnetic random access memory. In this thesis we explore two simple solutions with industry implementation in mind. The first is a low-damping (α< 5×10⁻³) ferromagnetic single-layer with modest anti-damping spin-orbit torque (SOT), $θ_{DL} ≈ 0.05. …

    vt Repository record for Practical Pathways to Efficient MRAM: Spin-Orbit Torques, Low-Damping, and Anomalous Hall Conductivity in Polycrystalline Materials (opens in a new tab)

  13. Domain Wall Based Magnonics in Iron Garnet

    … speed, materials like iron garnets, ferrimagnetic insulators with tunable magnetic properties, are essential. Key magnetic parameters, including saturation magnetization, perpendicular magnetic anisotropy, coercivity, and Gilbert damping, can be tailored through elemental substitution or …

    mit Repository record for Domain Wall Based Magnonics in Iron Garnet (opens in a new tab)

  14. Aspects of Dzyaloshinskii-Moriya Interaction in Two Dimensional Magnetic Structures

    Research on topologically protected chiral magnetic structures such as magnetic domain walls (DWs) and skyrmions, have gained extensive interest because of their possible applications in magnetic data storage industries. The recently observed chiral DW structures in ultrathin ferromagnetic lms with …

    arizona-thes Repository record for Aspects of Dzyaloshinskii-Moriya Interaction in Two Dimensional Magnetic Structures (opens in a new tab)

  15. Design and optimisation of a novel magnetic detection scheme for encoded magnetic information carriers.

    … method to create micron-sized, tuneable encoded magnetic information carriers that can be redeposited through a liquid suspension. This thesis aims to build on this work, further characterising the information carriers and presenting a possible novel detection technique. The magnetic information …

    cambridge Repository record for Design and optimisation of a novel magnetic detection scheme for encoded magnetic information carriers. (opens in a new tab)

  16. Magnetic nanostructures patterned by block copolymer lithography

    … twofold: understanding the methods of patterning magnetic films using self-assembled block copolymer masks and examining the magnetic reversal mechanisms of as deposited and patterned magnetic films. Ti / Co 66 at. % Cr 22 at. % Pt 12 at. % (CoCrPt) films with perpendicular magnetic anisotropy

    mit Repository record for Magnetic nanostructures patterned by block copolymer lithography (opens in a new tab)

  17. Optimization of magnetic thin films for generating stable chiral magnetic structures

    … stability, low energy and low current in magnetic devices make them attractive for memory storage, sensors and computing. Their effectiveness is limited by the current, density, and device size, which can be optimized by tuning the magnetic materials properties. In this thesis, we show the …

    mit Repository record for Optimization of magnetic thin films for generating stable chiral magnetic structures (opens in a new tab)

  18. Directed transport of superparamagnetic microbeads using periodic magnetically textured substrates

    Superparamagnetic microbeads (SPBs) have been widely used to capture and manipulate biological entities in a fluid environment. Chip-based magnetic actuation provides a means to transport SPBs in lab-on-a-chip technologies. This is usually accomplished using the stray magnetic field from patterned …

    mit Repository record for Directed transport of superparamagnetic microbeads using periodic magnetically textured substrates (opens in a new tab)

  19. Microstructural Analysis of Garnet-Heavy Metal Heterostructures

    … earth iron garnets (REIGs) are a class of ferrimagnetic insulators desirable for their tunable magnetic properties. Saturation magnetization, perpendicular magnetic anisotropy (PMA), coercivity, and Gilbert damping are just a few characteristics that can be altered via elemental substitution or …

    mit Repository record for Microstructural Analysis of Garnet-Heavy Metal Heterostructures (opens in a new tab)

  20. Magnetic tunnel junction devices and circuits for in-memory, neuromorphic and radiation hard computing

    The magnetic tunnel junction is a memory device at the core of emerging magnetic random access memory technology. As CMOS technology is approaching its physical limits, spintronics, with benefits like non-volatility and normally-off behavior, is a promising candidate for next-generation artificial …

    tdl Repository record for Magnetic tunnel junction devices and circuits for in-memory, neuromorphic and radiation hard computing (opens in a new tab)

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