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Showing 1 to 20 of 33 for “"parasitic inductance"”.

  1. Design of a 350 kW Silicon Carbide Based 3-phase Inverter with Ultra-Low Parasitic Inductance

    … of this thesis is to present a design for a low parasitic inductance, high power density 3-phase inverter using silicon-carbide power modules for traction application in the electric vehicles with a power rating of 350 kW. With the market share of electric vehicles continuing to grow, there is a …

    arkansas Repository record for Design of a 350 kW Silicon Carbide Based 3-phase Inverter with Ultra-Low Parasitic Inductance (opens in a new tab)

  2. Coupled-magnetic filters with adaptive inductance cancellation

    … performance degradation due to capacitor parasitic inductance and the size and cost of magnetic elements. Coupled-magnetic filters have been developed that provide increased filter order with a single magnetic component, but also suffer from parasitic inductance in the filter shunt path …

    mit Repository record for Coupled-magnetic filters with adaptive inductance cancellation (opens in a new tab)

  3. Power Module with Series-connected MOSFETs in Flip-chip Configuration

    … of high efficiency and high power density. Low parasitic impedance and thermal management is desired for the lower power loss and device stress. For power module with high efficiency and improved breakdown voltage, this thesis proposes a novel series-connected power MOSFETs module. Three IRF7832 …

    vt Repository record for Power Module with Series-connected MOSFETs in Flip-chip Configuration (opens in a new tab)

  4. Integrated Frequency-Selective Conduction Transmission-Line EMI Filter

    … between the connectors and the filter introduce parasitic inductance to the measurement setup. Both simulated and measured results show that transfer gain curve is very sensitive to the parasitic inductance. However, the insertion gain curve is not sensitive to the parasitic inductance. There are …

    vt Repository record for Integrated Frequency-Selective Conduction Transmission-Line EMI Filter (opens in a new tab)

  5. A Double-Sided Stack Low-Inductance Wire-Bondless SiC Power Module with a Ceramic Interposer

    … carbide (SiC) power devices to achieve a low parasitic inductance and an improved thermal performance. A half-bridge module consisting of 900-V SiC MOSFETs is realized to minimize stray parasitic inductance as well as to provide both vertical and horizontal cooling paths to maximize heat …

    arkansas Repository record for A Double-Sided Stack Low-Inductance Wire-Bondless SiC Power Module with a Ceramic Interposer (opens in a new tab)

  6. A Low Temperature Co-fired Ceramic (LTCC) Interposer Based Three-Dimensional Stacked Wire Bondless Power Module

    … side interconnections that introduce additional parasitic inductance in the current conduction path and prone to failure mechanism under high thermomechanical stresses. The loop inductance of the proposed 3-D half-bridge module exhibits 71% lower parasitic inductance compared to a wire bonded …

    arkansas Repository record for A Low Temperature Co-fired Ceramic (LTCC) Interposer Based Three-Dimensional Stacked Wire Bondless Power Module (opens in a new tab)

  7. Inductance cancellation techniques with application to EMI filters and components

    Inherent parasitic effects in passive circuit components, such as the equivalent parallel capacitance of magnetic windings and the equivalent series inductance (ESL) of capacitors, become dominant factors limiting the attenuation of high frequency signals in power filter networks. These limitations …

    mit Repository record for Inductance cancellation techniques with application to EMI filters and components (opens in a new tab)

  8. High Voltage Synchronous Rectifier Design Considerations

    … inherent flaw with drain-source sensing, namely parasitic inductance in the drain-source sense loop. This parasitic inductance causes an error in the sensed voltage, resulting in early SR turn-off and increased losses through the parallel diode. The parasitic will always be present in the …

    vt Repository record for High Voltage Synchronous Rectifier Design Considerations (opens in a new tab)

  9. Optimization of Power MOSFET for High-Frequency Synchronous Buck Converter

    … which takes into account the effect of parasitic inductance on the switching process. Another model for dv/dt-induced false triggering-on relates the false-trigger-on voltage with the parasitic elements of the device and the circuits. Some techniques are proposed to reduce the simulation …

    vt Repository record for Optimization of Power MOSFET for High-Frequency Synchronous Buck Converter (opens in a new tab)

  10. Double-Side Cooled 3.3 kV, 100 A SiC MOSFET Phase-Leg Modules for Traction Applications

    … module for heavy-duty traction applications. Parasitic extraction and thermal simulations of the module showed a parasitic inductance of 2.89 nH and junction temperature of 108.3 °C at a heat flux of 156 W/cm² under a typical water-cooling condition. Electric field simulations identified high …

    vt Repository record for Double-Side Cooled 3.3 kV, 100 A SiC MOSFET Phase-Leg Modules for Traction Applications (opens in a new tab)

  11. Characterization and Application of Wide-Band-Gap Devices for High Frequency Power Conversion

    … comprehensive consideration of the impacts of parasitics. Then based on the simulation model, detailed loss breakdown and loss mechanism analysis are studied. The cascode GaN HEMT has high turn-on loss due to the reverse recovery charge and junction capacitor charge, and the common source …

    vt Repository record for Characterization and Application of Wide-Band-Gap Devices for High Frequency Power Conversion (opens in a new tab)

  12. Design and Fabrication of Inverter and Rectifier Modules for Indirect Matrix Converter Applications

    … converter (IMC) application. A discussion on the parasitic inductance optimization is presented based on the electromagnetic simulation results extracted from the Ansoft Q3D extractor. The thermal analysis for the modules is performed using Dassault system SolidWorks 3D CAD tool to obtain …

    arkansas Repository record for Design and Fabrication of Inverter and Rectifier Modules for Indirect Matrix Converter Applications (opens in a new tab)

  13. EMI measurement and modeling techniques for complex electronic circuits and modules

    … diode providing the required capacitance and the parasitic inductance of a magnetic field loop (i.e., a parallel LC circuit). Measurement results showed good agreement with the simulated results.</p> <p>In the third paper, a wideband microwave method was developed as a means for rapid detection of …

    must-thes Repository record for EMI measurement and modeling techniques for complex electronic circuits and modules (opens in a new tab)

  14. Advanced filters and components for power applications

    … and filters by better compensating the parasitic effects of practical components. The main application for this improvement is in design of low pass filters for power electronics, although some other applications will be presented. In switching power supplies the input and output filters …

    mit Repository record for Advanced filters and components for power applications (opens in a new tab)

  15. A Wide Bandgap Silicon Carbide (SiC) Gate Driver for High Temperature, High Voltage, and High Frequency Applications

    … the power device would significantly reduce the parasitic inductance, require far less thermal management paraphernalia, reduce cost and size of the system, and result in more efficient and reliable electrical and thermal performance of the system.</p> <p>The design of a gate driver circuit with …

    arkansas Repository record for A Wide Bandgap Silicon Carbide (SiC) Gate Driver for High Temperature, High Voltage, and High Frequency Applications (opens in a new tab)

  16. Multifaceted Codesign for an Ultra High-Density, Double-Sided Cooled Traction Inverter Half Bridge Module

    … stresses efficient heat dissipation, minimized parasitic inductance, and a compact footprint. Key target parameters to achieve optimal performance include a Rdson below 20 mΩ, Rthjc under 0.2 K/W and a switching time below 20 ns. The proposed module features a double-sided cooling sandwiched …

    vt Repository record for Multifaceted Codesign for an Ultra High-Density, Double-Sided Cooled Traction Inverter Half Bridge Module (opens in a new tab)

  17. Study on Zero Crossing Detection in CRM Totem-pole PFC Converter

    … delay, and examines the effect of sensing parasitic inductance. Based on an understanding of the delay mechanism, ZCD delay compensation techniques are discussed and compared. Second, the coupling mechanism of dv/dt switching noise as common-mode noise in the ZCD circuit is analyzed. Upon …

    vt Repository record for Study on Zero Crossing Detection in CRM Totem-pole PFC Converter (opens in a new tab)

  18. Design and Validation of A High-Power, High Density All Silicon Carbide Three-Level Inverter

    … busbar structure can effectively reduce stray inductance in the current-commutation loop, reducing switching overshoots of power modules and increasing semiconductor reliability. The system-level design and trade-off is also analyzed and illustrated by using a 250kW three-level T-type …

    arkansas Repository record for Design and Validation of A High-Power, High Density All Silicon Carbide Three-Level Inverter (opens in a new tab)

  19. Switching-Loss Measurement of Current and Advanced Switching Devices for Medium-Power Systems

    … This is mainly due to the fact that the parasitic reactive elements are nonlinear and not as readily documented as I-V characteristics of a given power device. For example, non-linear parasitic capacitances in the device are given for a fixed frequency across a voltage sweep. Parasitic

    vt Repository record for Switching-Loss Measurement of Current and Advanced Switching Devices for Medium-Power Systems (opens in a new tab)

  20. Characterization and Failure Mode Analysis of Cascode GaN HEMT

    … developed in this thesis. The packaging related parasitic inductance, including both self-inductance and mutual-inductance, are extracted based on finite element analysis (FEA) methods. Then the accuracy of the simulation model is verified by a double-pulse tester, and the simulation results …

    vt Repository record for Characterization and Failure Mode Analysis of Cascode GaN HEMT (opens in a new tab)

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