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Showing 1 to 3 of 3 for “"paralleled SiC MOSFETs"”.

  1. Passive Balancing of Switching Transients between Paralleled SiC MOSFETs

    The SiC MOSFET has attracted interest due to its superior characteristics compared to its Si counterpart. Several SiC MOSFETs are usually paralleled to increase current capability, considering cost effectiveness and manufacturability. Current unbalance among the MOSFETs is a concern as it affects …

    vt Repository record for Passive Balancing of Switching Transients between Paralleled SiC MOSFETs (opens in a new tab)

  2. Packaging and Magnetic Integration for Reliable Switching of Paralleled SiC MOSFETs

    Silicon carbide (SiC) outperform Si chips in terms of high blocking voltage capability, low on-resistance, high-temperature operation, and high switching frequency. Several SiC MOSFETs are usually paralleled to increase current capability, considering cost effectiveness and manufacturability. For a …

    vt Repository record for Packaging and Magnetic Integration for Reliable Switching of Paralleled SiC MOSFETs (opens in a new tab)

  3. Soft Switching Control and Loss Analysis for High Frequency Power Converters

    … is progressively nearing its inherent physical constraints. Silicon-based power converters typically operate at switching frequencies below 100 kHz to mitigate switching losses. This imposed limitation poses a challenge in attaining elevated power density, primarily due to the need for …

    cambridge Repository record for Soft Switching Control and Loss Analysis for High Frequency Power Converters (opens in a new tab)