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Showing 1 to 1 of 1 for “"paraelektrisch"”.
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Impact of the interface on the paraelectric to ferroelectric phase transition in expitaxial BaSrTiO 3 thin film capacitors
The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a drastic reduction of the area of the incorporated storage capacitors. As a consequence, the film thickness of the used dielectrics has to be decreased in a similar way. When considering …