Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 11 of 11 for “"p-type conductivity"”.
-
Investigation of doped ZnO by Molecular Beam Epitaxy for n- and p-type Conductivity
… the currently dominant ITO in industries as n-type transparent electrodes and the difficulty in achieving reliable and reproducible p-type ZnO. On the one hand, n-type ZnO heavily doped with Al or Ga (AZO or GZO) is the most promising to replace ITO due to the low cost, abundant material …
-
Photovoltaic properties and size-pH phase stability of iron disulfide from density-functional theory
… the ubiquitous observation of unintentional p-type conductivity of pyrite thin films are investigated via DFT defect computations. Native defects occur in low concentrations due to high formation energies, implying that pyrite is intrinsically stoichiometric. The p-type conductivity can be …
-
Semiconducting properties of the passive films on copper
… show that the passive films on copper are p-type semiconductors. The metal deficits form the electron acceptors, which give rise to p-type conductivity. The passive films show photovoltages under illumination. The band gaps of the anodic films and thermal oxides are similar to that of CuO …
-
Growth Kinetics of GaN and Effects of Flux Ratio and Growth Temperature on Properties of Undoped and Mg-Doped GaN Films Grown by PAMBE
… is found that the growth conditions to achieve p-type films are closely related to those for undoped films since p-type conductivity is obtained only after a complete compensation of the background carriers. By supplying a high Mg flux, heavily doped p-type GaN films are obtained. The observation …
-
Growth and Characterization of Molecular Beam Epitaxial Gallium-Arsenide Antimonide and Gallium-Arsenide Antimonide/gallium-Arsenide Superlattices
… on unintentionally-doped layers reveal p-type conductivity due to two distinct acceptor levels. Hole mobilities are qualitatively explained in a model that assumes a dominant alloy scattering mechanism.
-
On the growth and characterisation of Zinc Oxide
… surface exciton, SX. Doped ZnO demonstrated p-type conductivity, with carrier concentrations as high as 4.10*16 cm−3 under illumination for N-ZnO. P-ZnO displayed a fast-decaying photoconductive effect. High concentrations of dopant were found disadvantageous to crystalline and optical quality, …
-
Defect engineering of cuprous oxide thin-films for photovoltaic applications
… nitrogen doping is proposed as an effective p-type doping method to control optical and electrical properties of Cu₂O thin-films. The film's p-type conductivity is elucidated by temperature-dependent Hall effect measurements and a compensated semiconductor model. Secondly, an …
-
Sintering and electrical properties of the perovskite system (La,Ca) (Cr,Co) O₃
… Ca for La and 10 m% Co for Cr.</p> <p>Electrical conductivity DC measurements were made as a function of temperature and oxygen activity. At 1000° C and 1 atm. oxygen the electrical conductivity ranged from 17 to 51 S/cm for …
-
Growth and Characterization of (InxGa1-x)2O3, and NiO Heterostructures
… with each other with the alloy exhibited n-type conductivity with the resistivity, carrier concentration, and mobility value of ~ 0.6-50 Ω-cm, ~1017 - 1018 cm-3, and ~ 0.34 cm2V-1s-1, respectively. During the growth of Ga2O3 the use of, lanthanum aluminate (LAO) substrate and Sn dopant were …
-
Epitaxial Gallium Oxide Heterojunctions for Vertical Power Rectifiers
… diode (SBD). However, Ga2O3 exhibits a lack of p-type conductive that arises from an absence of dispersion within the valence band maximum. This has caused researchers to abandon the idea of homojunction devices that Si, SiC, and GaN devices benefit from; shifting to a heterojunction approach …
-
Solution-Processed Thin Film Deposition and Characterization of Multinary Chalcogenides: Towards Highly Efficient Cu2BaSn(S,Se)4 Solar Devices
… reveal that the lifetime, carrier mobility, p-type conductivity and hole density (~1013 cm-3) are nominally independent of Cu content. The champion PCE exceeds 4.7% for all copper compositions in the phase pure region, with a record value of 5.1%, representing the highest performance level …