Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 57 for “"p-n junction"”.
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P-N junction microwave phase modulators.
Massachusetts Institute of Technology. Dept. of Electrical Engineering. Thesis. 1972. M.S.
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Effects of ion irradiation on 4H- SiC p-n junction
… trapping centers for carriers. The 4H- SiC p-n junction is the base component of the bipolar junction devices such as BJT and IGBT which have applications in the power device field as well as in microelectronics and solid- state devices. They find wide applications in hostile environments such …
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Linear Mode CMOS Compatible p-n Junction Avalanche Photodiode for Smart-lighting Applications
… characterization of CMOS compatible p-n junction Si APDs to be operated in the linear avalanche mode. The recursive dead-space multiplication theory (DSMT), is applied to the recently fabricated thin Si n+p APDs to predict the avalanche and breakdown properties including low excess noise …
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Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy
Realizing lateral p-n junction is a critical technique to fabricate electronic and optic devices. Recently, lateral p-n junctions were achieved by ex-situ doping on thin film or in-situ doping of vertical nanowire (NW). However, fabricating lateral junctions on thin film are less effective due to …
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Electrical and Optical Probing of Extremely Large Planar Polymer Light-Emitting Electrochemical Cells
… doping and the formation of a p-n junction. Compared to conventional polymer light-emitting diodes, LECs possess some favorable device characteristics, making them attractive candidates for flat panel display applications. However, the underlying operating mechanism of LECs has been …
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Post-crystallisation treatment and characterisation of polycrystalline silicon thin-film solar cells on glass
… 1000 &176;C, whereby this process shifts the p-n junction by 0.55 microns into the absorber layer. By optimising the hydrogenation process in a reactor with four linear microwave plasma sources, the lateral non-uniformity of the open-circuit voltage is reduced to less than &177; 3% over an area of …
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Residual stresses and mechanical properties of thin film photovoltaic materials
… consisted of an amorphous silicon (Si) p-n junction diode, a zinc oxide (ZnO) Transparent Conductive Oxide (TCO) layer (each 1μm thick), a Kapton® polyimide layer acting as the bottom cathode and a thick aluminum substrate. Analysis of straight blister delaminations in the p-n junction layer …
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Laser beam induced current studies of Hg1-xCdxTe photodiodes
… electrical and optical based measurements of p-n junction photodiodes. The technique is non-destructive and employs a focused low-power laser beam that is scanned across the semiconductor surface, between two shorted ohmic contacts located at remote positions on either side of the scanned area. …
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Light Emission and Charge Transport in Reverse Biased Polymer Junctions
A semiconductor homojunction such as a p-n junction is at the heart of many modern solid-state devices. Among organic electronic devices, light-emitting electrochemical cells (LECs) are unique in that they possess a true p-n junction formed by in situ electrochemical doping reactions. Similar to an …
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Bipolar metal oxide thin film diodes
… hard to be doped both n- and p-type, so heterojunctions are the feasible way to construct bipolar devices. Extensive literature review indicates that most research was focused on nickel oxide and oxides of copper for p-type materials, and variants of zinc oxide for n-type materials. This work …
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GaN Epitaxy on Melt Grown Thermally Prepared Bulk ZnO Substrates
… MODFET structure on ZnO and GAN/ZnO based p-n junction were discussed.
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Generalized drift-diffusion for microscopic thermoelectricity
… thermodynamics while devices such as heterojunction bipolar transistors and semiconductor lasers are often described with the drift-diffusion equations. We present a microscopic description of the thermoelectric effects using a generalization of the common drift-diffusion formulation of …
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Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors
… field. An all-semiconductor epitaxial p-n junction field-effect transistor (FET) based on low-doped Ga0.975Mn0.025As was fabricated. It has an in-built n-GaAs back-gate, which, in addition to being a normal gate, enhances the gating effects, especially in the depletion of the epilayer, by …
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Liquid Phase Epitaxial Indium-Gallium-Arsenide - Phosphide Avalanche Photodiodes for Near-Infrared Detection
… device structure consisting of an InP p-n junction for multiplication and an InGaAsP or InGaAs layer for absorption is presented which results in a substantial decrease in dark current over what is typically observed in simple InGaAsP p-n junctions.
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IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale
… by molecular beam epitaxy, including GaN p-n junction nanorods, InGaN nanodisks, and GaN quantum disks and quantum wires. We demonstrate that effective doping, alloying and quantum confinement can be readily achieved in nanowire heterostructures, by cathodoluminescence in scanning transmission …
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Analysis of laser diode bar degradation
… in the epitaxial layers used to create the p-n junction to oxidation of the mirror facets. In addition, degradation mechanisms caused by the packaging process are also common. In order to understand and quantify these degradation mechanisms, a spectrometer system and associated data analysis …
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Quantum Dots In Two-Dimensional Tungsten Diselenide
… WSe_2 is integrated into a double dot P-N junction device. Design considerations for double dot devices are discussed. Early measurements of double dot devices show features in the current possibly consistent with transport through double dots.</p>
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Fabrication and Characterization of Small Scale Photo-Electro-Chemical Solar Cells
… cell operates using a semiconductor-electrolyte junction instead of the p-n junction of a conventional solid state solar cell. The silicon electrode is fabricated by controlled wet etching so that the bottom of the micro-cavity becomes a very thin membrane, which allows photons to penetrate and …
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Model-Order Reduction Techniques for Circuits and Interconnects Simulation
… techniques are directly applied to p-n junction device equations to accurately model the carrier dynamic in the junctions. A robust approximation technique that uses Householder orthoganalization techniques is developed to generate macromodels of electromagnetic systems, such as …
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