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Showing 1 to 20 of 73 for “"p-i-n"”.
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Organische p-i-n Solarzellen
In this work a p-i-n type heterojunction architecture for organic solar cells is shown, where the active region is sandwiched between two doped wide-gap layers. The term p-i-n means here a layer sequence in the form p-doped layer, intrinsic layer and n-doped layer. The doping is realized by …
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Organic p-i-n Homojunctions: Fundamentals and Applications
In this thesis, we study the physical properties of doped organic semiconductors. We first demonstrate the impact of doping on C60 films. In contrast to previous reports for organic thin films, the n-doped C60 films show a decrease of mobility with increasing doping levels; i.e., they follow the …
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MOCVD nitridinių p-i-n struktūrų formavimas spinduliuotės jutikliams /
Gallium nitride (GaN) is a promising material for next generation electronic and photonic devices. GaN has a wide direct bandgap (3,4 eV) which is tunable from infrared to ultraviolet spectrum by mixing nitride with additional group III elements. Its superior material properties such as high …
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Some Properties of Silicon P-'i'-N Diodes Compensated With Gold
Made available in DSpace on 2015-05-12T21:41:41Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 6711885.PDF: 2262886 bytes, checksum: 29fb0d0167c14000fc7fca25215ba081 (MD5) Previous issue date: 1967
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Current Oscillations in Long Zinc-Doped Silicon P-I-N Diodes
Made available in DSpace on 2015-05-12T21:41:52Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7000794.PDF: 2253903 bytes, checksum: 8e85c6840a20960b5c3d26492f65f332 (MD5) Previous issue date: 1969
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"Some properties of silicon p-""i""-n diodes compensated with gold"
"The electrical and optical properties of gold-doped silicon p--""i""-n diodes at low and moderate current injection levels are examined in this work. The forward J-V characteristic of these diodes follows Ohm's law at the lowest injection levels. At slightly higher levels the current density in …
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Infrared detection properties of Si P-I-N diodes doped with deep levels
Made available in DSpace on 2017-11-30T22:11:07Z (GMT). No. of bitstreams: 2 6070599.pdf: 33209903 bytes, checksum: 162575177826612629aa81702d567d78 (MD5) license.txt: 4813 bytes, checksum: 715c4321821a960fa1a1e91d2ac7ebce (MD5) Previous issue date: 1969
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Development of high-speed P-i-N photodetector for 50Gb/s optical link in data centers
Various emerging applications such as high-performance computing (HPC) have been pushing the speed limit of communication. The growing dependence on the optical interconnect in data centers results from its superiority over traditional electrical interconnects to transmit data at high speed over …
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Design and modeling of high speed P-i-N photodetector for 50 GB/S optical fiber links
High speed optical interconnect holds the key to the future Internet revolution; optical fibers have replaced traditional copper wires over long distances within data centers and high performance computing (HPC) due to their speed and reliability. With the increasing demand for high speed data …
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Comparative study of dilute nitride and bismide sub-junctions for tandem solar cells
Theoretical models show that tandem solar cells can reach efficiency of more than 50 %. To achieve efficiencies closer to the projected outputs in a quad tandem solar cell, a 1.0 eV sub-junction with good optical and electrical properties is sought. The observed bandgap reduction when small amounts …
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Resonant energy transfer in light harvesting and light emitting applications
The performance of light emitting and light harvesting devices is improved by utilising resonant energy transfer. In lighting applications, the emission energy of a semiconductor heterostructure and the absorption of organic dyes or colloidal quantum dots (QDs) are engineered so that the …
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Post assembly process development for Monolithic OptoPill integration on silicon CMOS
Monolithic OptoPill integration by means of recess mounting is a heterogeneous technique employed to integrate III-V photonic devices on silicon CMOS circuits. The goal is to create an effective fabrication process that enables the volume production of high performance optoelectronic integrated …
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Advancing inorganic perovskite solar cells for application in tandem architectures
Silicon-perovskite tandem solar cells have remarkable power conversion efficiencies (PCEs) and can contribute to the rapid transition towards renewable energy sources. While inorganic perovskite solar cells show superior temperature stability as compared to organic-inorganic perovskite solar cells, …
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Gate-geometry Dependence of Enhancement-mode p-GaN Gate High Electron Mobility Transistors
While GaN-based transistors for power electronics have in many situations demonstrated technological superiority over conventional Si based devices, the development of GaN power electronics has only scratched the surface of the possibilities that lie ahead. The most promising device structure for …
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Dilute Nitride Based Vertical Cavity Enhanced Photodetector
The research reported in this thesis is aimed at developing and demonstrating the performance of a p-i-n / vertical cavity enhanced (VCE) photodetector structure with different material compositions of dilute nitride. The tunable selectivity is taken into account during the development in order for …
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High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
The objective of this research is the design and development of ultra-low-leakage mixed-conduction gallium nitride (GaN) diodes with reverse blocking voltage approaching parallel-plane behavior. Although GaN is a promising wide bandgap (WBG) material, experimentally reported GaN power devices …
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Two-photon absorption in bulk semiconductors and quantum well structures and its applications
The purpose of this dissertation is to provide a study and possible applications of two-photon absorption (2PA), in direct-gap semiconductors and quantum-well (QW) semiconductor structures. One application uses extremely nondegenerate (END) 2PA, for mid-infrared (mid-IR) detection in uncooled …
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Detection Statistics Of Multiple-Pulse Optical Signals Through Atmospheric Turbulence
<p>Statistics are studied for signal detection in optical communication systems operating through the atmosphere. Optical communication systems with which this study is concerned are those that employ intensity modulation and direct detection. Atmospheric turbulence, which is fluctuations in the …
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