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Showing 1 to 16 of 16 for “"p-doping"”.

  1. Electrical and Optical Probing of Extremely Large Planar Polymer Light-Emitting Electrochemical Cells

    … on the principle of in situ electrochemical doping and the formation of a p-n junction. Compared to conventional polymer light-emitting diodes, LECs possess some favorable device characteristics, making them attractive candidates for flat panel display applications. However, the underlying …

    queens Repository record for Electrical and Optical Probing of Extremely Large Planar Polymer Light-Emitting Electrochemical Cells (opens in a new tab)

  2. Investigation of Optical and Electronic Properties of Au Decorated MoS2

    … to Au, leaving a hole behind, thus cause p-doping in MoS2. As electrons from MoS2 are transferred to Au, they do not decay back to their initial ground state, leading to PL quenching in the hybrid system. To study the effect of Au deposition on electronic properties of ultra-thin and …

    ucf

  3. Effect of grain structure and doping on the mechanical properties of polysilicon thin films for MEMS

    … investigated the role of grain size and doping on the nature and origin of critical flaws that determine the tensile strength and the local resistance to crack initiation in 1-μm thick polysilicon films, as quantified by the effective mode I critical stress intensity factor, KIC,eff. For …

    uiuc Repository record for Effect of grain structure and doping on the mechanical properties of polysilicon thin films for MEMS (opens in a new tab)

  4. Controlled doping of organic semiconductors and 2d materials with molecular reductants and oxidants

    … their redox reaction in solution with and their doping in the solid-state of various organic semiconductor acceptors. Detailed mechanistic studies are necessary to recognize the strengths and limitations of existing dimers to inform future dopant design. The newly synthesized n-dopants together …

    gatech Repository record for Controlled doping of organic semiconductors and 2d materials with molecular reductants and oxidants (opens in a new tab)

  5. Experimental and ab initio investigations into the fundamentals of corrosion, in the context of supercritical water oxidation systems

    … species; this might be defeated by p-doping the oxide. Further, the chemically relevant states at the surface assumed a ferromagnetic order. Effects of a variable dielectric medium upon the chemistry of the surface were assessed for the bare surface and adsorption of H and Cl.

    mit Repository record for Experimental and ab initio investigations into the fundamentals of corrosion, in the context of supercritical water oxidation systems (opens in a new tab)

  6. Electroactive Conjugated Polymers as Charge-Transport Materials for Optoelectronic Thin-Film Devices

    … on the other hand it facilitates reversible p-doping of the resultant polymers. Although n-doping of poly-1–poly-3 is possible due to the electron-deficient oxadiazole rings, it causes the continuous degradation of these electron-acceptor units. Interestingly, this process does not influence …

    wurz-thes Repository record for Electroactive Conjugated Polymers as Charge-Transport Materials for Optoelectronic Thin-Film Devices (opens in a new tab)

  7. Photoconductivity and minority carrier lifetime in tin sulfide and gallium arsenide semiconductors for photovoltaics

    … un-annealed tin sulfide (SnS) with respective p-doping carrier concentrations of 1018 cm-3, 1016 cm-3, and 1015 cm-3 through photoconductivity measurements. Films are 1 [mu]m thick and have a four-bar and two-bar contact configuration to model carrier conductivity as a sheet. For calculations, …

    mit Repository record for Photoconductivity and minority carrier lifetime in tin sulfide and gallium arsenide semiconductors for photovoltaics (opens in a new tab)

  8. Decoration of graphene sheets with metal and metal oxide nanostructures by low-pressure plasma deposition

    … energy downshift in C 1s peak suggests a p-type doping of GNPs due to charge transfer at the interface as a consequence of the higher work function difference between the Nb2O5 (4.70 eV) and GNPs (4.33 eV). In the second step, the interface between the graphene sheets and Nb2O5 nanoparticles were …

    trento Repository record for Decoration of graphene sheets with metal and metal oxide nanostructures by low-pressure plasma deposition (opens in a new tab)

  9. Mixed (ion and electron) conducting polymers, with applications in batteries

    … were determined as a function of the p-doping level, using a cell containing a liquid electrolyte and an applied bias potential. The results were fitted with a transmission line model and revealed an electronic conductivity varying from 4.20 x10-10 to 1.69 x10-5 S/cm dependent on the …

    soton Repository record for Mixed (ion and electron) conducting polymers, with applications in batteries (opens in a new tab)

  10. Elektronischer Transport in Graphen

    … prepared graphene samples e.g. an intrinsic p-doping, a mobility asymmetry of electrons and holes, the so called “minimal conductivity” and a field effect hysteresis at room temperature. In collaboration with the group of A. Yacoby (Harvard) density fluctuations in the vicinity of the Dirac …

    aachen Repository record for Elektronischer Transport in Graphen (opens in a new tab)

  11. Development of Advanced Nanomaterials for Potential Lithium-Ion Battery Application

    … when P and N elements were doped together. The P doping effect on the structure of NCNTs was investigated in details. Furthermore, novel nanosctuctured Li4Ti5O12 were prepared by a microwave-assisted hydrothermal method in a fast and energy-efficient way. Their electrochemical performances were …

    uwo Repository record for Development of Advanced Nanomaterials for Potential Lithium-Ion Battery Application (opens in a new tab)

  12. Techniques for high-speed direct modulation of quantum dot lasers

    … length lasers decrease monotonically with the p-doping level from 0.54 GHz/mA1/2 and 5.3 GHz (un-doped dots), to 0.46 GHz/mA1/2 and 3.6 GHz (40 holes/dot). Although the maximum ground state gain of the p-doped lasers is increases with p-type concentration, the undesired increase in internal …

    unm Repository record for Techniques for high-speed direct modulation of quantum dot lasers (opens in a new tab)

  13. Mikrowellenplasma-Simulation, Abscheidung und Charakterisierung von polykristallinen, dotierten und undotierten Diamantschichten

    Die vorliegende Arbeit beschäftigt sich mit zwei unterschiedlichen Themenbereichen auf dem Forschungsgebiet der CVD-Diamant-Technologie. Im Mittelpunkt des ersten Teils stehen Computersimulationen, die zur Optimierung und Neuentwicklung von Mikrowellen-Plasmareaktoren für die …

    freiburg-diss Repository record for Mikrowellenplasma-Simulation, Abscheidung und Charakterisierung von polykristallinen, dotierten und undotierten Diamantschichten (opens in a new tab)

  14. AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework

    … the most promising element candidates for p-doping of MoS2. Specifically, we found VB group impurity elements, such as Ta, substituting Mo to achieve negative formation energy values with impurity states all sitting at less than 0.1 eV from the valence band maximum (VBM), making them the …

    uiuc Repository record for AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework (opens in a new tab)

  15. Functional organic thin films under extreme confinement

    … silicon substrates. This accompanied with p-doping of the polymer by the graphene substrates. OFET devices incorporating graphene nanoflakes in ultrathin films of polymer blends showed enhancement in hole mobility by ~2 orders of magnitude compared to pristine polymer films. We attributed …

    uiuc Repository record for Functional organic thin films under extreme confinement (opens in a new tab)

  16. Characterization of type-II GaSb quantum rings in GaAs solar cells

    … of the location of QR layers and their delta doping within the solar cell is investigated in this work. Devices with 5 layers of delta doped QRs placed in the intrinsic, n and p regions of a GaAs solar cell are experimentally investigated and the deduced values of Jsc, Voc, Fill factor (FF), …

    lancaster Repository record for Characterization of type-II GaSb quantum rings in GaAs solar cells (opens in a new tab)