Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 30 for “"p-channel"”.
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p-Channel gallium nitride transistor on Si substrate
… of high speed and high power GaN based n-channel transistors (mostly in the form of AlGaN/GaN High Electron Mobility Transistors). However, the full potential of GaN technology cannot be reached without the existence of p-channel GaN transistors. These devices are required for efficient …
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Fabrication and testing of dual gate p-channel MOSFETs
In this thesis, I fabricated and tested p-channel dual gate MOSFETs that will be used to make conductance and resistance measurements of nanocrystalline solids. Using MOSFETs with narrow gates, we can measure the resistance of these nanocrystals, which are typically extremely high. The group had …
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Impact of uniaxial strain on P-channel 111-V quantum-well field effect transistors
… benefits of strained Si having been exhausted, n-channel I-V quantum-well field effect transistors (QW-FETs) show promising potential as a post-Si CMOS logic technology. To implement complementary circuits, achieving a high-performance p-channel III-V transistor remains one of the grand …
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Enhancement of antimonide-based p-channel quantum-well field effect transistors using process-induced sprain
… limitations to the use of silicon as the channel material. Hence, there is a strong interest in III-V semiconductor materials to replace silicon as the channel material as a result of their outstanding electron transport properties. While III-V materials have demonstrated impressive …
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GaN Complementary-Metal-Oxide-Semiconductor (CMOS) Technology
… for electrons. These properties enable n-channel GaN-based transistors to operate at a higher switching speed, and at a higher power density than their Si counterparts. To realize the full potential of GaN, the need for a complementary circuit technology cannot be overemphasized. A high …
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Analysis, Design, and Evaluation of Hierarchical Switched-Capacitor Cell Voltage Balancers
… was first designed using a fully N-channel switch configuration and a mixed N- and P-channel switch configuration. This was tested at the 2S, 4S, 8S, and 32S battery configuration voltage levels for combined cell stack voltages up to 100V. Subsequently, a complete 4S multi-level …
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Polarization Division Multiplexing for Optical Data Communications
Multiple parallel channels are ubiquitous in optical communications, with spatial division</p>multiplexing (separate physical paths) and wavelength division multiplexing (separate optical</p>wavelengths) being the most common forms. In this research work, we investigate the viability</p>of …
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Charged Pion Photoproduction Cross Section and Beam Asymmetry Measurement on HD
… cross sections in the d(gamma,pi<sup>-</sup>p) channel agree with previous measurements.
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Comparative analysis of analog LDO design
… and concluded that a Type-B amplifier with n-channel metal oxide semiconductor field effect transistor (MOSFET) output stage or a Type-A amplifier with p channel MOSFET (PMOS) output stage yields the best PSR. Digital LDO regulator topologies have also been discussed. The digital LDO regulator …
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Antimonide-based III-V multigate transistors
As Si CMOS technology advances, alternative channel materials are under extensive investigation to replace or augment Si in future generations of nanoelectronics. III-V compound semiconductors, such as InGaAs and InGaSb are promising candidates as channel materials for MOSFETs as a result of their …
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Vibration intensity difference thresholds
… in the glabrous skin have been modelled by ‘channels’ within the somatosensory system that predict the effects of vibration frequency, vibration magnitude, vibration duration and contact conditions. Difference thresholds are less well understood and there is little knowledge of their …
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Fundamental and Applied Aspects of Electronics Based on Single -Walled Carbon Nanotube Thin Films
… to values that are nearly negligible. Not only p-channel but also and n-channel and ambipolar devices have been achieved by use of simple polymer coating strategies. Complex digital circuits composed of nearly 100 SWNT TFTs have also been successfully demonstrated. Finally, we demonstrated certain …
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A method for characterization of single-event latchup technologies as a function of geometric variation
… electronics systems. As CMOS comprises of p-channel and n-channel transistors, there are parasitic PNPN paths that act as cross-coupled bipolar transistors capable of creating low-impedance paths between the power supply rails known as the “latchup” state. Latchup is destructive and requires …
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Tunneling Field-Effect Transistors for Low Power Logic: Design, Simulation and Technology Demonstration
… was explored for TFET application and GeSn p-channel TFETs is realized for the first time. Descent electrical characteristic was achieved.
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Hybrid-gate deep depletion mosfet high-k zro2/diamond-based power devices
… diamond layers and the lack of efficient p-channel devices comparable to their n-channel counterparts reached by other WBGSs. It is still challenging provide devices that exploit the diamond’s properties to their full potential. This thesis proposes an alternative high-κ ZrO2/diamond-based …
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Negative bias temperature instability (NBTI) experiment
… and tends to have a stronger effect on p-channel devices. This instability is observed with an applied "on" biasing during normal operation and can be accelerated with thermal stress. A normal applied electrical bias on CMOS transistors can lead to the generation of interface states at the …
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First steps toward the construction of a channel cell for electrochemical studies under hydrothermal conditions
The high-T,p channel flow cell (HT-CFC) for electrochemical studies under hydrothermal conditions would allow to investigate at a fundamental level the interaction between new materials and media conditions such those found in modern power plants, industrial processes, and geochemistry. A first CFC …
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Interfacial Structures of Oxides on GaAs
… to warrant the demonstration of both n- and p-channel enhancement GaAs MOSFETs. High-resolution transmission electron microscopy (HRTEM) indicates that deposition of MgO, Al$\sb2$O$\sb3$, and Ga$\sb2$O$\sb3$, fail to yield a truly amorphous oxide. Although deposition of SiO$\sb2$ results in an …
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Radiation-induced Deep-level Defects in CCD Imaging and Spectroscopy Sensors
… our research aims. Using this technique both p-channel (Chapter 5) and n-channel (Chapter 7) CCDs are analysed, with the primary aim being to measure defect emission time constants (the length of time between the capture and emission of a charge carrier at a defect level) since this is the …
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Neuro-Silicon Interface of a Hirudo medicinalis Retzius Cell Integrated with Field Effect Transistor
… </em>and joined to the gate oxide of a P-channel field effect transistor using SU-8 photoresist wells treated with poly-l-lysine. Transistors were operated in strong inversion and source-drain currentfluctuations were observed that correlated with action potentials of the current clamped …
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