Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 25 for “"p-GaN"”.
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p-GaN Platform for Next-Generation GaN Complementary Transistors and Circuits
Gallium nitride (GaN) integrated circuits (ICs) are receiving increasing attention because they offer compactness, reduced parasitics, and higher performance compared to discrete transistors or printed circuit board (PCB) integration. The p-GaN platform exhibits tremendous potential in power ICs …
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Highly Scaled p-GaN-gate HEMTs for Low Voltage Power Electronics
… bandgap semiconductors such as gallium nitride (GaN) have emerged as promising alternatives to traditional silicon devices for low-voltage (10-100 V) applications. This work investigates the design, fabrication, and scaling of p-GaN-gate highelectron-mobility transistors (HEMTs). A p-GaN-gate …
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N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP
… and saturation velocity, gallium nitride (GaN) material has emerged as a key contender in the high-performance semiconductor market, paving the way for the future optoelectronics and high-frequency electronics. The oxide/semiconductor interface quality could significantly impact device …
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Gate-geometry Dependence of Enhancement-mode p-GaN Gate High Electron Mobility Transistors
While GaN-based transistors for power electronics have in many situations demonstrated technological superiority over conventional Si based devices, the development of GaN power electronics has only scratched the surface of the possibilities that lie ahead. The most promising device structure for …
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Characterization of pGaN-gate power HEMTs
This thesis presents a comprehensive study of p-GaN gate GaN High Electron Mobility Transistors (HEMTs) with a focus on understanding how fabrication process variations and gate structural designs impact key electrical performance metrics. Five industry-fabricated wafers, each processed with …
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Junction Based Gallium Nitride Power Devices
… the silicon's material limit. Gallium nitride (GaN) is a wide bandgap semiconductor with high electron mobility and high critical electric field. GaN-based power devices promise superior device performance over the Si-based counterpart. The primary design target of a unipolar power device is to …
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A Critical Study of Gallium Nitride-Based Digital Technology
… sets were fabricated. Keys to the fabrication of GaN BGJFETs may be the device-quality material and the stable fabrication technology as well as the masks. The difficulties and achievements in the growth of n-GaN and p-GaN films by plasma-assisted molecular beam epitaxy (PAMBE) were discussed. The …
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AlGaN/GaN heterostructures for enhancement mode transistors
… a larga banda, come il nitruro di gallio (GaN) e le relative leghe, hanno mostrato eccellenti proprietà fisiche. Un aspetto interessante legato al GaN è la possibilità di crescere eterostrutture AlGaN/GaN, in cui si forma un gas bidimensionale di elettroni (2DEG). Basandosi sulla …
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Modelling of Multichannel GaN Transistors
… Nitride High Electron Mobility Transistor (GaN HEMT) is the representative GaN-based wide bandgap semiconductor device. It has been one of the most promising research topics due to its excellent electronic properties in high power, high frequency and high temperature applications. The …
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Investigation of Threshold Voltage Instability in Normally Off GaN on Si HEMT
… with a smaller form factor. Gallium Nitride (GaN) in particular, with its ability to form heterointerfaces naturally forms a high mobility 2-dimensional electron gas (2-DEG) at hetero interfaces like AlGaN/GaN making it an apt candidate for making power devices with lower on state resistance …
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Vertical gallium nitride power devices on bulk native substrates
Lateral power devices based on AlGaN/GaN hetero-structures have achieved excellent performance in the medium power range applications. However for higher voltage higher current switches, a vertical structure is preferred since its die area does not depend on the breakdown voltage. This thesis …
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Modeling and Electrical Characterization of Ohmic Contacts on n-type GaN
… to move towards new materials. Gallium Nitride (GaN) has the potential to meet the growing demands due to the wide band-gap nature which leads to various enhanced material properties like, higher operational temperature, smaller dimensions, faster operation and efficient performance. The metal …
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GaN Complementary-Metal-Oxide-Semiconductor (CMOS) Technology
… invention of blue-LED is the efficient doping of GaN with p-type dopants. For years p-GaN has been used only in optoelectronic devices such as LEDs and LASERs. In this thesis we demonstrate how p-GaN can be used to realize the next generation of efficient RF and power electronics. Apart from being …
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p-Channel gallium nitride transistor on Si substrate
… to the development of high speed and high power GaN based n-channel transistors (mostly in the form of AlGaN/GaN High Electron Mobility Transistors). However, the full potential of GaN technology cannot be reached without the existence of p-channel GaN transistors. These devices are required for …
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GaN Electronics for High-Temperature Applications
… offer a strong indication of the potential of GaN transistor technology for HT applications, the development of HT (500 °C) GaN-ICs is still at its early stage due to the low degree of complexity and integration demonstrated so far. Major challenges in the realization of GaN HT-robust …
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Multi-Kilovolt Gallium Nitride Power Transistors
… silicon carbide (SiC) and gallium nitride (GaN). Benefitting from the wide bandgap, high electron mobility and good thermal conductivity of GaN, GaN-based power devices can achieve fast switching speed, high breakdown voltage, and small on-resistance. They have been deployed in numerous …
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Efficiency droop mitigation and quantum efficiency enhancement for nitride Light-Emitting Diodes
In the past decade, GaN-based nitrides have had a considerable impact in solid state lighting and high speed high power devices. InGaN-based LEDs have been widely used for all types of displays in TVs, computers, cell phones, etc. More and more high power LEDs have also been introduced in general …
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Top-down Cross-Section Controlled III-Nitride Nanowire Lasers
… two-step etch process developed for vertical GaN nanowires offers the ability to precisely control the cross-section of the nanowire lasers. Consequently, the lasing properties can potentially be tailored by controlling the cross-section. In this dissertation, annular-shaped emission was …
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Trap modelling and injection effects in GaN power devices
GaN power devices are promising candidates for the next generation of high efficiency power semiconductor devices. Their material and device properties enable power conversion systems that are potentially smaller, lighter, less complex, cheaper and more efficient than silicon based solutions. While …
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Electron Injection-induced Effects In Iii-nitrides: Physics And Applications
… studied at various temperatures in Mg-doped p-GaN, p-Al[subscript x]Ga[subscript 1-x]N, and p-Al[subscript x]Ga[subscript 1-x] N/GaN superlattices. It was found that Lsubscript n] experienced a multi-fold linear increase and that the rate of change of L[subscript n] decreased exponentially with …
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