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Showing 1 to 3 of 3 for “"oxide charge traps"”.

  1. Oxide Charge Traps and Interface States at the Silicon - Silicon-Dioxide Interface

    Made available in DSpace on 2015-05-13T15:22:19Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 8009184.PDF: 5184720 bytes, checksum: 9aa13487b79c46fe3257d939d46ae56b (MD5) Previous issue date: 1979

    uiuc Repository record for Oxide Charge Traps and Interface States at the Silicon - Silicon-Dioxide Interface (opens in a new tab)

  2. Oxide charge traps and interface states at the silicon-silicon dioxide interface

    Meta1-oxide-semiconductor capacitors were fabricated with 2800 A thick dry grown thermal oxides under various conditions to determine the effects of oxidation parameters on oxide charge trapping. Electrons and holes were injected into the oxides by the VUV-bias method. In this method, electron-hole …

    uiuc Repository record for Oxide charge traps and interface states at the silicon-silicon dioxide interface (opens in a new tab)

  3. Commercialization of germanium based nanocrystal memory

    … retention require the use of a thick tunneling oxide. This compromises writing and reading speed as well as endurance. A smaller device size can be achieved and speed and can be improved by decreasing the oxide thickness. However, significant charge leakage will occur if the oxide is too thin, …

    mit Repository record for Commercialization of germanium based nanocrystal memory (opens in a new tab)