Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 25 for “"on state resistance"”.
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In-situ impedance characterization for assessing SiC MOSFETs reliability
This dissertation presents an in-situ and online impedance characterization circuit for condition monitoring (CM) of Silicon Carbide (SiC) MOSFETs. The core concept involves injecting a pre-adjusted high-frequency current (≥ 2 MHz) into the device and isolating the resulting voltage component …
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Theory of Superjunction Devices
Since the first ideal specific resistance model by Fujihira in 1997 and the first commercial superjunction MOSFET by Infineon technology in 1998, the technology and the understanding of superjunction devices have been gradually progressed. Although Fujihira’s ideal model was developed to estimate …
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Design and Modelling of Smart Power IC Components For the Automotive Industry
In this thesis, n- and p-type power semiconductor devices used for H-bridge Direct Current (DC) motor drives in automotive application are developed. It will focus on the development of power semiconductor devices which are able to support a voltage in the range of 80V-100V with the specific …
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LATERAL POWER DEVICES AND TECHNOLOGIES FOR HIGH VOLTAGE INTEGRATED CIRCUITS
… is to integrate high power and low power devices on the same wafer. Such a Power Integrated Circuit (PIC) benefits in cost, weight, functionality and reliability. A Lateral MOS controlled Power Device is a key component in such a monolithic integrated circuit, can handle high voltages, high …
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Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module
This paper describes the design, fabrication, and testing of a 1.2 kV, 6.5 mΩ, half-bridge, SiC MOSFET power module to evaluate the impact of parametric device tolerances on electrical and thermal performance. Paralleling power devices increases current handling capability for the same bus voltage. …
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High power wide bandgap cascode switching circuits
… the efficiency of mains voltage power electronic circuits. Several commercial WBG transistors are now available, but all exhibit undesirable gate drive characteristics. The cascode circuit has been suggested as a solution to this problem: WBG cascodes improve the switching speed, gate …
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Design & optimization of automotive power electronics utilizing FITMOS MOSFET technology
Power electronics are essential to many automotive applications, and their importance continues to grow as more vehicle functions incorporate electronic controls. MOSFETs are key elements in automotive power electronic circuits and MOSFET characteristics can strongly affect circuit size, cost and …
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Design and Fabrication of Inverter and Rectifier Modules for Indirect Matrix Converter Applications
<p>In power converter applications, silicon carbide (SiC) power semiconductor devices are preferred over their silicon counterparts due to many advantages such as wide bandgap, high junction temperatures and low on-state resistance. The SiC devices provide reduced conduction and switching losses. …
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Nonvolatile and Volatile Resistive Switching - Characterization, Modeling, Memristive Subcircuits
… extending Moore\'s law in the next decade. The conductive bridge random access memory (CBRAM) is one of the most promising candidates. CBRAM shows unique nanoionics-based filamentary switching mechanism. Compared to flash memory, the advantages of CBRAM include excellent scalability, low power …
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Current-Transformer Based Gate-Drive Power Supply With Reinforced Isolation
… demand for electric power in high-power applications. High-power converters are making major impacts on these high-power applications. Recent breakthroughs in Silicon Carbide (SiC) materials and fabrication techniques have led to the development of high-voltage, high-frequency power devices, which …
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Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy
… presents a comprehensive study of the application of the PAMBE-SAG technique to fabrication of high-power GaN-based switching HEMTs. First, a detailed study of the efficacy of SAG was conducted by comparing it with ion-implantation, a popular technique for improving Ohmic contacts. A consistent …
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Optically Controlled High Power High Speed Wide Band Gap Devices
<p> There has been continued and increasing interest over the past few years in the areas of wide bandgap power electronics for high speed, high power and high efficiency switches which enable innovative approaches to compact pulse power system design and implementation. In the area of high speed …
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Evaluation of phase change materials for reconfigurable interconnects
… use of programmable integrated circuit interconnect vias using an indirectly heated phase change material is evaluated. Process development and materials investigations are examined. Devices capable of multiple cycles between on/off states for reconfigurable applications have been successfully …
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Fabrication and Characterization of HfO2 Based Resistive Random Access Memory Devices
Current technology is dependent on the usage of a memory hierarchy. Primary components include SRAM, DRAM, and Flash. The ordering of these components in the memory hierarchy is dictated by both the cost and the performance of the components. These devices all share two distinct problems in that …
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Experimental investigation of semiconductor losses in cryogenic DC-DC converters
As high-temperature superconductor technology approaches commercial applications, for example superconducting magnetic energy storage, superconducting fault current limiters, and superconducting rotary machines for marine propulsion, it is timely to consider the possibility of integrating the …
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GaN-on-Silicon HEMTs and Schottky diodes for high voltage applications
Gallium Nitride (GaN) is considered a very promising material for use in the field of power devices as its application in power systems would result in a significant increase in the power density, reduced power losses, and the potential to operate at high frequencies. The wide bandgap of the …
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Static and Dynamic Characterization of Silicon Carbide and Gallium Nitride Power Semiconductors
Wide-bandgap semiconductors have made and are continuing to make a major impact on the power electronics world. The most common commercially available wide-bandgap semiconductors for power electronics applications are SiC and GaN devices. This paper focuses on the newest devices emerging that are …
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Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress
Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) are having increased applications in high-power and high-frequency conversion areas due to their superior switching speed, high breakdown voltage, and low conduction losses. Despite their advantages, GaN HEMTs are prone to performance …
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Advanced III-V / Si nano-scale transistors and contacts: Modeling and analysis
<p>The exponential miniaturization of Si CMOS technology has been a key to the electronics revolution. However, the continuous downscaling of the gate length becomes the biggest challenge to maintain higher speed, lower power, and better electrostatic integrity for each following generation. Hence, …
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Analysis, design, fabrication, and testing of a MEMS switch for power applications
… an electrostatic MEMS switch for power applications. The proposed switching system consists of an array of single-switch cells, and a parallel transistor-based protection circuit for arcless switching. Such a system design enables the switch development to focus on a normally-open …
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