Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"nucleation layer"”.
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Substrate Impurity Incorporation Mitigation for Improved AlGaN/GaN-ON-Si RF Performance
… is formed between Silicon substrate and AlN nucleation layer during high-temperature deposition. This parasitic conduction path is highly detrimental as it is capacitively coupled to the GaN HEMT 2DEG channel. Moreover, the presence of significant lattice mismatch and thermal mismatch between …
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Role of growth inhibitors in nucleation and growth of thin film deposited by chemical vapor deposition in high aspect ratio structures
… understand the role of, growth inhibitors in the nucleation and growth of thin films by chemical vapor deposition (CVD). We focus on steady state processing methods using stable molecules in order to change thin film surface morphology in a controlled manner in high aspect ratio structures. The …
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Electronic Transport in Highly Mismatched InAs Films on GaAs
… properties of Si- and Mg-doped InAs epitaxial layers grown by MOCVD were studied by performing magneto-transport measurements at different temperatures, from 300 K down to 1.2 K. The longitudinal magnetoresistance and Hall effect indicate a three-band system existing in n-type (p-type) InAs, …
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Bioactivity and Cell-Mediated Targeting of Multistage Nanoporous Silicon Particles
… were significantly increased and removal of the nucleation layer triggered premature collapse of the pores resulting in a less stable NSP. NSP failed to alter advanced cellular functions (e.g., tube formation, multi-potent differentiation) and systemic administration did not any significant …
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Trap modelling and injection effects in GaN power devices
… that the substrate and its interface with the nucleation layer can potentially control its magnitude. Backgating measurement techniques have been employed to characterize buffer traps and an ad hoc TCAD model has been developed to evaluate different modelling approaches. Inconsistencies between …
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Structural Characterisation of Heteroepitaxial Zincblende Gallium Nitride
… with increasing GaN deposition. Annealing of nucleation layers reduces the substrate coverage, due to both material desorption and the ripening of islands. Incomplete substrate coverage of the nucleation layer results in a low zincblende phase purity and pits in the subsequent epilayer. For …
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Novel structures for lattice-mismatched infrared photodetectors
… conditions. For the sample grown on Si, an AlSb nucleation layer was used to reduce the occurrence of twinning defects. In addition to the samples grown on mismatched substrates, an equivalent structure was further grown on a native GaSb substrate, for comparison. X-ray diffraction (XRD) was used …