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Showing 1 to 20 of 23 for “"negative differential resistance"”.

  1. Investigation of Negative Differential Resistance Phenomena in Quantum Well Heterostructures

    … in quantum well heterostructures and led to the negative differential resistance observation is presented. Using the Hall effect measurement technique, the mobility and carrier concentration were measured and analyzed by considering different scattering mechanisms and carrier thermal activation …

    arkansas Repository record for Investigation of Negative Differential Resistance Phenomena in Quantum Well Heterostructures (opens in a new tab)

  2. Gate current modeling of tunneling real-space transfer transistor with negative differential resistance

    … of gate current is introduced to obtain a negative differential resistance (NDR) on a dual-channel tunneling real-space transfer transistor (TRSTT). The device was fabricated on a GaAs (100) substrate with a GaAs/InGaAs/GaAs straddling heterostructure. According to the experimental data …

    uiuc Repository record for Gate current modeling of tunneling real-space transfer transistor with negative differential resistance (opens in a new tab)

  3. Transverse and Longitudinal Tunneling in Confined Heterostructures

    … nature of electrons and holes to exhibit negative differential resistance (NDR) via tunneling.

    uiuc Repository record for Transverse and Longitudinal Tunneling in Confined Heterostructures (opens in a new tab)

  4. Modeling optically activated high power semiconductor switches

    … recombination radiation transport, and negative differential resistance. The model has the ability to address different switch geometries and the consequences of nonuniformities in carrier injection, permittivity, and illumination of the sample on switch operation.

    uiuc Repository record for Modeling optically activated high power semiconductor switches (opens in a new tab)

  5. Wide-Bandgap III-Nitride Tunnel Junctions and Novel Approaches towards Improving Optoelectronic Devices

    … p-type doping levels and even with delta doping. Negative differential resistance is measured at a low peak voltage of 1.3 V, and is measurable down to cryogenic temperatures as low as 77 K. Tunnel junctions are then demonstrated as tunnel contacts to p-i-n diodes exhibiting a state of the art low …

    gatech Repository record for Wide-Bandgap III-Nitride Tunnel Junctions and Novel Approaches towards Improving Optoelectronic Devices (opens in a new tab)

  6. Investigating the properties of molecular wires on gold and diamond

    … enhanced conductivity, rectification and negative differential resistance in the transition metal-OPP molecular films. In Chapter 4, theoretical simulations of the molecular wires based on the first-principles density functional theory and non-equilibrium Greenb s function revealed …

    nus Repository record for Investigating the properties of molecular wires on gold and diamond (opens in a new tab)

  7. Electrical and optical properties of carbon nanotube intra-connects and conductive polymers

    … has been shown to correlate with a novel negative differential resistance (NDR) effect. Electroplated intraconnects exhibited unique properties both for multi-walled and single-walled carbon nanotube channels.

    njit Repository record for Electrical and optical properties of carbon nanotube intra-connects and conductive polymers (opens in a new tab)

  8. Quantum transport of electrons through graphene and carbon nanotubes

    … between source and drain shows a peculiar negative differential resistance behavior (NDR) while drawing current- voltage characteristics. This property is used in many electronic devices. The main feature of graphene is that the electron has zero effective mass at Dirac points, but gains …

    unr Repository record for Quantum transport of electrons through graphene and carbon nanotubes (opens in a new tab)

  9. Design, synthesis, and testing of novel organic oligomers for use as molecular-scale electronic devices

    … techniques to elucidate switching mechanisms and negative differential resistance behavior thought to be based on molecular conformational changes.

    rice Repository record for Design, synthesis, and testing of novel organic oligomers for use as molecular-scale electronic devices (opens in a new tab)

  10. Uniaxial Strain Effect on Graphene-Nanoribbon Resonant Tunneling Transistors

    … show the resonant tunneling and strong negative differential resistance (NDR). These devices which have potential for future high-frequency and logic applications such as high-speed IC circuits, signal generators, data storage, etc., has been studied both theoretically and experimentally …

    cape-town Repository record for Uniaxial Strain Effect on Graphene-Nanoribbon Resonant Tunneling Transistors (opens in a new tab)

  11. Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization

    … (DD) theory is used to investigate a novel negative differential resistance (NDR) effect and a collector current kink effect in first-generation SiGe HBTs at deep cryogenic temperatures. A theory of positive feedback due to the enhanced heterojunction barrier effect at deep cryogenic …

    gatech Repository record for Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization (opens in a new tab)

  12. Electronic properties and device applications of rotationally controlled van der Waals heterostructures

    … reveal resonant tunneling, manifested by negative differential resistance, which stem from energy and momentum conservation. Because WSe₂ possesses strong spin-orbit coupling which leads to coupled spin-valley degrees of freedom, controlling the angle between the two WSe₂ monolayers allows …

    texas Repository record for Electronic properties and device applications of rotationally controlled van der Waals heterostructures (opens in a new tab)

  13. Advances in molecular scale electronics: Synthesis and testing of nanoscale wires and devices

    … and tested nanoscale devices that exhibit negative differential resistance with a valley to peak ratio of over 1000:1 that is 10 times that of current solid-state devices and shown long lasting random access memory. The use of these molecular scale wires and devices should allow us to …

    rice Repository record for Advances in molecular scale electronics: Synthesis and testing of nanoscale wires and devices (opens in a new tab)

  14. Single-electron transport and electron-phonon interactions in graphene heterostructured self-assembled molecular solid-state devices

    … accompanied by three distinct types of negative differential resistance, hysteresis, and random telegraph noise. Devices were fabricated using 5 nm and 2 nm PbS nanocrystals attached to SAMs derived from alkanedithiols and a series of oligo(arylene ethynylene) (OAE) molecules. The second …

    cambridge Repository record for Single-electron transport and electron-phonon interactions in graphene heterostructured self-assembled molecular solid-state devices (opens in a new tab)

  15. Physics-Based Compact Model Development of Field Emitter Arrays

    … limit show an unexplained, yet reproducible Negative Differential Resistance (NDR) region resulting in a double saturation behavior. Upon further analysis of the electrostatics, the parallel-plate configuration was found to introduce a 2-dimensional acceleration channel affecting electron …

    mit Repository record for Physics-Based Compact Model Development of Field Emitter Arrays (opens in a new tab)

  16. InGaAs/GaAsSb quantum-well Tunnel-FETs for ultra-low power applications

    … device I-V characteristics and gate-dependent negative-differential-resistance (NDR) under forward bias condition (VDS < 0), experimental and simulation results of QWTFET-based RF detector, oscillator and mixer have demonstrated the potential of QWTFET in these non-logic circuit applications, …

    mit Repository record for InGaAs/GaAsSb quantum-well Tunnel-FETs for ultra-low power applications (opens in a new tab)

  17. Novel RTD-Based Threshold Logic Design and Verification

    … in conjunction with RTDs to modulate effective negative differential resistance (NDR). However, RTDs are intrinsically suitable for implementing threshold logic rather than Boolean logic which has dominated CMOS technology in the past. To fully take advantage of such emerging nanotechnology, …

    vt Repository record for Novel RTD-Based Threshold Logic Design and Verification (opens in a new tab)

  18. Novel electronic behaviors in graphene nanostructures

    … Those include, in particular, photo-induced negative differential resistance, bistability, and hysteretic I-V characteristics. This wide variety of behaviors is enabled by a number of interesting physical phenomena which can be accessed in these structures, such as resonant tunneling, …

    mit Repository record for Novel electronic behaviors in graphene nanostructures (opens in a new tab)

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