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Showing 1 to 8 of 8 for “"nanowire transistor"”.

  1. III-V vertical nanowire transistor for ultra-low power applications

    … materials and ultimate scalability of vertical nanowire (VNW) device architecture, III-V VNW transistors are promising to extend Moore's law further than any other device technology. In this thesis, III-V VNW transistor technology has been pioneered via a top down approach for logic applications …

    mit Repository record for III-V vertical nanowire transistor for ultra-low power applications (opens in a new tab)

  2. Exploration of 3D Nanoscale Image Sensor to Enable Logic and Sensing in Single Chip

    Nanowire photodetectors have been attracting and gained increased attention due to their potential for very high sensitivity detection. Silicon photodetectors are of particular interest due to their low cost, ease of processing and ability for integration with conventional fabrication techniques. …

    umkc Repository record for Exploration of 3D Nanoscale Image Sensor to Enable Logic and Sensing in Single Chip (opens in a new tab)

  3. InAs Nanowire Devices and Circuits

    Since the introduction of the transistor and the integrated circuit, the semiconductor industry has developed at a remarkable pace. By continuously fabricating smaller and faster transistors, it has been possible to maintain an exponential increase in performance, a phenomenon famously described by …

    lund Repository record for InAs Nanowire Devices and Circuits (opens in a new tab)

  4. Multi-functional Hybrid Gating Silicon Nanowire Field-effect Transistors

    … or tablets, have led to the emergence of silicon nanowire transistors a decade ago. Along with the Si-based nanotechnology, the silicon compatible optical and chemical sensing applications have boosted the research on hybrid devices that combine the organic and inorganic materials. Apart from the …

    qucosa-diss

  5. A study of silicon and germanium junctionless transistors

    … and feasibility of the proposed Junctionless transistor (JNT) have been evaluated for both Silicon and Germanium channels. The performance of Silicon JNTs with 22 nm gate length have been characterized at elevated temperature and stressed conditions. Furthermore, steep Subthreshold Slopes (SS) …

    cork Repository record for A study of silicon and germanium junctionless transistors (opens in a new tab)

  6. Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels

    This dissertation research effort explores new transistor topologies using three-dimensional nanowire (NW)-array channels formed by both bottom-up and top-down synthesis. The bottom-up NW research centers on the Au-catalyzed planar GaAs NW assembly discovered at the University of Illinois …

    uiuc Repository record for Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels (opens in a new tab)

  7. Orientation Controllable Epitaxial Vapor-Liquid-Solid Semiconductor Nanowire Synthesis on Silicon Substrate

    <p>Semiconductor nanowires synthesized via the vapor-liquid-solid (VLS) mechanism have attracted extensive research interest in recent years owing to their unique structure as a promising candidate for the future electronic devices. Germanium and silicon nanowires, in particular, are compatible …

    purdue-thes Repository record for Orientation Controllable Epitaxial Vapor-Liquid-Solid Semiconductor Nanowire Synthesis on Silicon Substrate (opens in a new tab)

  8. Electrical detection of atmospheric pollutants and detergents on silicon

    … surfaces on ambipolar silicon junctionless nanowire transistors (Si-JNTs) (Chapter 2). Experimental work and density functional theory (DFT) modelling demonstrate that NO2 functions as a "pseudo" molecular dopant, influencing key device parameters across p-type and n-type conduction channels …

    cork Repository record for Electrical detection of atmospheric pollutants and detergents on silicon (opens in a new tab)