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Showing 1 to 3 of 3 for “"nanowire orientation"”.

  1. Synthesis of III-V nitride nanowires with controlled structure, morphology, and composition

    … to the lattice mismatch with growth substrates, nanowires can be grown dislocation-free on highly mismatched substrates including silicon. Furthermore, axial and radial junction configurations offer unique nanoscale device architectures that enable more optimal device design. In order to realize …

    mit Repository record for Synthesis of III-V nitride nanowires with controlled structure, morphology, and composition (opens in a new tab)

  2. Orientation Controllable Epitaxial Vapor-Liquid-Solid Semiconductor Nanowire Synthesis on Silicon Substrate

    <p>Semiconductor nanowires synthesized via the vapor-liquid-solid (VLS) mechanism have attracted extensive research interest in recent years owing to their unique structure as a promising candidate for the future electronic devices. Germanium and silicon nanowires, in particular, are compatible …

    purdue-thes Repository record for Orientation Controllable Epitaxial Vapor-Liquid-Solid Semiconductor Nanowire Synthesis on Silicon Substrate (opens in a new tab)

  3. Growth and applicability of radiation-responsive silica nanowires

    … an important role in processes on the nanoscale. Nanowire growth via vapor-liquid-solid (VLS) mechanism is no exception in this regard. Interfacial and line energies are found to impose some fundamental limits during three-phase nanowire growth and lead to formation of stranded nanowires with …

    uiuc Repository record for Growth and applicability of radiation-responsive silica nanowires (opens in a new tab)