Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 8 of 8 for “"n-type conductivity"”.
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Layer disordering and aluminum-gallium interchange in aluminum-gallium arsenide - gallium-arsenide quantum well heterostructures
… and annealed, and for crystals converted to n-type conductivity by high-temperature Si diffusion or by Si$\sp+$ ion implantation and annealing.
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Donor-Induced Layer Disordering via Silicon Diffusion in Aluminum-Gallium Arsenide - Gallium-Arsenide Quantum-Well Heterostructures, and Disorder-Defined Index-Guided Stripe Geometry Laserdiodes
… the proper diffusion conditions Si produces n-type conductivity in Al(,x)Ga(,1-x)As layers, and will counterdope (to n-type) initially p-type Al(,x)Ga(,1-x)As regions which form the top confining layer of p-n QW laser that is grown on an n-type GaAs substrate. Si diffusion is masked with a …
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Highly Conductive Ultrananocrystalline Diamond Thin Films via Nitrogen Incorporation
… biggest limiting factors has been the lack of n-type diamond films with suitable conductivity. This work demonstrates a method to fabricate a highly conductive, n-type diamond film via nitrogen doping. Ultrananocrystalline diamond (UNCD) films with up to 0.2% total nitrogen content were …
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Fabrication of Zinc Nitride Thin Films using RF Magnetron Sputtering Deposition for Optoelectronic Applications
… direct transition. The zinc nitride showed n-type conductivity with low resistivity and high carrier concentration. To study the RF discharge power effect, the zinc nitride thin films were synthesized at different discharge powers densities. With discharge power density increasing, the film …
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Growth and Characterization of (InxGa1-x)2O3, and NiO Heterostructures
… with each other with the alloy exhibited n-type conductivity with the resistivity, carrier concentration, and mobility value of ~ 0.6-50 Ω-cm, ~1017 - 1018 cm-3, and ~ 0.34 cm2V-1s-1, respectively. During the growth of Ga2O3 the use of, lanthanum aluminate (LAO) substrate and Sn dopant were …
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Process Dependence of Defects and Dopants in Wide Band Gap Semiconductor and Oxides
… However, as-grown un-doped ZnO is naturally n-type and controllable p-type doping is still not stable and reliable. The origin of the n-type conductivity is also controversial, so the ability to understand and control the intrinsic and impurity related defects in ZnO is essential. We used …
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MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications
… a working set of conditions, the screw and edge type dislocation density in the AlN were reduced to around 2.2×108 cm-2 and 1.3×109 cm-2 , respectively, using an optimized three-step process, as estimated by TEM. An atomically smooth surface with an RMS roughness of around 0.3 nm achieved over …
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Investigation of doped ZnO by Molecular Beam Epitaxy for n- and p-type Conductivity
… the currently dominant ITO in industries as n-type transparent electrodes and the difficulty in achieving reliable and reproducible p-type ZnO. On the one hand, n-type ZnO heavily doped with Al or Ga (AZO or GZO) is the most promising to replace ITO due to the low cost, abundant material …