Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 31 for “"n-channel"”.
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Design, synthesis and characterization of thiazole-based conjugated polymers and their applications to n-channel organic electronics
… conjugated polymers for pure n-channel organic electronic devices are highly desirable in applications such as metal‐oxide‐semiconductor (CMOS)‐like complementary circuits, organic thermoelectrics, and all‐polymer solar cells. Among many electron-poor units, thiazoles stand out …
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GaN Complementary-Metal-Oxide-Semiconductor (CMOS) Technology
… for electrons. These properties enable n-channel GaN-based transistors to operate at a higher switching speed, and at a higher power density than their Si counterparts. To realize the full potential of GaN, the need for a complementary circuit technology cannot be overemphasized. A high …
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Switch-Level Timing Simulation of Mos Vlsi Circuits
… presented in this thesis can handle only n-channel MOS (NMOS) circuits, but are easily extendible to handle complementary MOS (CMOS) circuits as well.
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Fabrication and testing of dual gate p-channel MOSFETs
In this thesis, I fabricated and tested p-channel dual gate MOSFETs that will be used to make conductance and resistance measurements of nanocrystalline solids. Using MOSFETs with narrow gates, we can measure the resistance of these nanocrystals, which are typically extremely high. The group had …
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p-Channel gallium nitride transistor on Si substrate
… of high speed and high power GaN based n-channel transistors (mostly in the form of AlGaN/GaN High Electron Mobility Transistors). However, the full potential of GaN technology cannot be reached without the existence of p-channel GaN transistors. These devices are required for efficient …
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Comparative analysis of analog LDO design
… and concluded that a Type-B amplifier with n-channel metal oxide semiconductor field effect transistor (MOSFET) output stage or a Type-A amplifier with p channel MOSFET (PMOS) output stage yields the best PSR. Digital LDO regulator topologies have also been discussed. The digital LDO regulator …
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InGaAs MOSFETs for logic and RF applications : reliability, scalability and transport studies
InGaAs has emerged as an extraordinary n-channel material due to its superb electron transport properties and low voltage operation. With tremendous advancements over the years, InGaAs MOSFETs have attracted much attention as promising device candidates for both logic and THz applications. However, …
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Antimonide-based III-V multigate transistors
As Si CMOS technology advances, alternative channel materials are under extensive investigation to replace or augment Si in future generations of nanoelectronics. III-V compound semiconductors, such as InGaAs and InGaSb are promising candidates as channel materials for MOSFETs as a result of their …
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Impact of uniaxial strain on P-channel 111-V quantum-well field effect transistors
… benefits of strained Si having been exhausted, n-channel I-V quantum-well field effect transistors (QW-FETs) show promising potential as a post-Si CMOS logic technology. To implement complementary circuits, achieving a high-performance p-channel III-V transistor remains one of the grand …
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Fundamental and Applied Aspects of Electronics Based on Single -Walled Carbon Nanotube Thin Films
… to values that are nearly negligible. Not only p-channel but also and n-channel and ambipolar devices have been achieved by use of simple polymer coating strategies. Complex digital circuits composed of nearly 100 SWNT TFTs have also been successfully demonstrated. Finally, we demonstrated certain …
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A method for characterization of single-event latchup technologies as a function of geometric variation
… electronics systems. As CMOS comprises of p-channel and n-channel transistors, there are parasitic PNPN paths that act as cross-coupled bipolar transistors capable of creating low-impedance paths between the power supply rails known as the “latchup” state. Latchup is destructive and requires …
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Full-band Monte Carlo simulation of hot electrons in scaled silicon devices
… scaling on hot electrons in different types of n-channel MOSFETs and flash memory structures. A MOSFET with a single source/drain implant, an LDD MOSFET, an SOI MOSFET, and a MOSFET built on top of a heavily doped ""ground plane"" have been simulated. Different scaling techniques have been applied …
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A Wireless Surface Electromyography (WSEMG) System
… sensors, each representing a unique data channel, positioned about the patient's body. Data transmission cables are linked between the surface mounted sensor nodes and a backpack worn by the patient. As the number of sensors increases, the patient's freedom of mobility decreases due to the …
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Analysis, Design, and Evaluation of Hierarchical Switched-Capacitor Cell Voltage Balancers
… was first designed using a fully N-channel switch configuration and a mixed N- and P-channel switch configuration. This was tested at the 2S, 4S, 8S, and 32S battery configuration voltage levels for combined cell stack voltages up to 100V. Subsequently, a complete 4S multi-level …
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The scattering of spinning hadrons from lattice QCD
… is anticipated in the flavour exotic isospin-2 channel and as such it provides an ideal testing ground for this first calculation. I work at heavier than physical quark masses at the $\text{SU}(3)_{\text{F}}$ point where the up, down and strange quarks are mass degenerate. Finite-volume spectra …
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High-resolution transmission electron microscopy of III-V FinFETs
… electron transport properties. InGaAs n-channel metal-oxide-semiconductor field-effect transistors have already demonstrated promising characteristics, and the antimonide material system is emerging as a candidate for p-channel devices. As transistor technology scales down to the …
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High mobility germanium MOSFETs : study of ozone surface passivation and n-type Dopant channel implants combined with ALD dielectrics
… MOSFET applications. To date, Ge p-channel device behavior has shown promise, with many reports of measured hole mobilities exceeding that of Si. However, Ge n-channel devices have shown poor performance due to an asymmetric distribution of interface state density (Dit) that degrades …
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Enhancement of antimonide-based p-channel quantum-well field effect transistors using process-induced sprain
… limitations to the use of silicon as the channel material. Hence, there is a strong interest in III-V semiconductor materials to replace silicon as the channel material as a result of their outstanding electron transport properties. While III-V materials have demonstrated impressive …
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Electronic device fabrication and characterization based on two-dimensional materials
… fabricated. The devices show typical n-channel characteristics, indicating that MoS2 and WS2 are naturally n-type doped. Due to the type II band alignment and sharp interface, these vertical and lateral MoS2/WS2 heterostructures can potentially be used for tunneling field-effect …
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p-GaN Platform for Next-Generation GaN Complementary Transistors and Circuits
… generation of GaN complementary technology (p-channel and n-channel field-effect transistors (FETs)). Based on the GaN-CMOS platform, the aggressive scaling of novel complementary transistors (self-aligned-gate p-FET and self-aligned metal/p-GaN-gate HEMT) is pursued. Alternative metallization …
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