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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 6 of 6 for “"mosfet channel"”.
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Advanced characterization of 4H-SiC MOSFET channel [Caratterizzazione avanzata del canale 4H-SiC MOSFET]
Lo sviluppo di MOSFET di potenza ad alte prestazioni in carburo di silicio (SiC) rappresenta un passo fondamentale per l'avanzamento della moderna elettronica di potenza. Grazie all'ampio bandgap, all'elevata conducibilità termica e all'alto campo elettrico, il 4H-SiC è emerso come materiale …
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MOSFET channel engineering using strained Si and strained Ge grown on SiGe virtual substrates
… circuits decreases, the use of alternative channel materials such as germanium and strained silicon ([epsilon]-Si) is increasingly being considered as a method for improving the performance of MOSFETs. While [epsilon]-Si grown on relaxed Si[sub]l-x Ge[sub]x (i.e. single-channel …
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Investigations of ultra shallow junction ion implanted biaxial tensile strained silicon by means of X-Ray, Raman and photoacoustic techniques
The application of strain to the active channel region of the metal-oxide-semiconductor-field-effect-transistor (MOSFET) has become a necessary practice in integrated circuit (IC) fabrication. The introduction of strain allows increased carrier mobilities, and concomitant device performance …
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Lattice mismatched compound semiconductors and devices on silicon
… field effect transistors (MOSFETs). However, the limited size of III-V substrates and the degradation of IIIV MOSFET channel mobility remain two major challenges for III-V MOSFETs. The purpose of this thesis is to solve or partially solve these challenges. To create large …
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High-field transport in two-dimensional graphene and molybdenum disulfide
… obtain uniform potential and heating along the channel, and we developed simple yet practical models for heating and high-field drift velocity in graphene, including the roles of both temperature and carrier density. We find that transport in supported-graphene devices does not resemble that of …
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In-situ impedance characterization for assessing SiC MOSFETs reliability
… monitoring (CM) of Silicon Carbide (SiC) MOSFETs. The core concept involves injecting a pre-adjusted high-frequency current (≥ 2 MHz) into the device and isolating the resulting voltage component induced by this injection. By applying algebraic operations, the drain-to-source impedance is …