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Showing 1 to 5 of 5 for “"monolithic device"”.

  1. Large-Scale Graphene Film Deposition for Monolithic Device Fabrication

    … developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors.</p> <p>The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double …

    arkansas Repository record for Large-Scale Graphene Film Deposition for Monolithic Device Fabrication (opens in a new tab)

  2. Novel Approaches to Power Scaling In Mode-Locked Laser Diode Based Ultrashort Pulse Sources

    … regions were cascaded together in a single monolithic device via a thin tunnel junction. A simple two-section, narrow ridge laser which had 2 active regions that were cascaded together via a thin tunnel junction was used to demonstrate mode-locking in a device with a multi-active region …

    dundee Repository record for Novel Approaches to Power Scaling In Mode-Locked Laser Diode Based Ultrashort Pulse Sources (opens in a new tab)

  3. High power ultra-short pulse Quantum-dot lasers

    … laser has led to successful application of such device for two-photon imaging. Dual-wavelength mode-locking is demonstrated via ground (?=1180 nm) and excited (?=1263 nm) spectral bands with optical pulses from both states simultaneously in the 5-layer quantum-dot two-section diode laser. The …

    dundee Repository record for High power ultra-short pulse Quantum-dot lasers (opens in a new tab)

  4. III-V compound semiconductor selective area epitaxy on silicon substrates

    … properties than silicon enable the electronic devices made of III-V materials to perform at higher switching speed. The integration of III-V semiconductor devices on silicon is the most approachable way that utilizes both the mature manufacturing technology of silicon CMOS circuits and the good …

    uiuc Repository record for III-V compound semiconductor selective area epitaxy on silicon substrates (opens in a new tab)

  5. Germanium on silicon heteroepitaxy for high efficiency photovoltaic devices

    Optoelectronic devices based on III-V direct gap semiconductors enable efficient energy conversion for photovoltaic cells, light emission for LEDs, and on-chip communication via various microphotonic components. However, widespread adoption of III-V solar cells is limited by the expensive Germanium …

    mit Repository record for Germanium on silicon heteroepitaxy for high efficiency photovoltaic devices (opens in a new tab)